Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

Fernández‐Lorenzo, Concha; Araújo, D.; Martin, J. Holmes; Alcántara, Rodrigo; Navas, Javier; Villar, M. P.; Alegre, M. P.; Volpe, Pierre‐Nicolas; Omnès, Franck; Bustarret, Étienne

doi:10.1016/j.diamond.2010.02.030

Cited by 11 publications

(6 citation statements)

References 17 publications

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“…Here it must be stated that the samples have had distinct growth temperatures: the non‐centered sample always presented a growth temperature ∼900 °C, whereas the centered sample had an additional 10–25 °C above it. Additionally, from the CL data no clear evidence of boron compensation by donors and/or hydrogen‐induced boron passivation is seen 13, 14.…”

Section: Resultsmentioning

confidence: 91%

High quality p‐type chemical vapor deposited {111}‐oriented diamonds: Growth and fabrication of related electrical devices

Lazea

Garino

Teraji

et al. 2012

Physica Status Solidi (a)

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In this paper the quality of boron‐doped diamond films grown by microwave (MW) plasma activated chemical vapor deposition on high pressure high temperature synthetic type Ib {111}‐oriented diamond substrates is estimated from the correlations between low‐temperature cathodoluminescence analyses and Hall measurements. The layers attributes, obtained in the low methane concentration regime (0.05% [CH4]/[H2] ratio) and using low plasma powers (450–500 W), are completed by impurities incorporation investigations (secondary ion mass spectroscopy). Hall mobility values exceeding 550 cm2 V−1 s−1 at room temperature and characteristic excitonic luminescence peaks were obtained, indicating towards the high crystalline quality of our {111}‐oriented diamond films. Based on these B‐doped samples, Schottky junctions were fabricated and analyzed, presenting the highest rectification ratio when compared with similar devices.

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Section: Resultsmentioning

confidence: 91%

High quality p‐type chemical vapor deposited {111}‐oriented diamonds: Growth and fabrication of related electrical devices

Lazea

Garino

Teraji

et al. 2012

Physica Status Solidi (a)

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“…In the optical-range extended defects related to the A-band, point defects are well-known from published studies and charts [92]. During the last two decades, CL has been demonstrated [93] to be an exceptional tool to evaluate the doping level [94] with an accuracy one order of magnitude better than secondary ion mass spectroscopy (SIMS). It also allows determining the type of point defects present in the crystal as H3 that are generated in the mid-gap [95].…”

Section: Structural Characterization Techniquesmentioning

confidence: 99%

Diamond for Electronics: Materials, Processing and Devices

et al. 2021

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Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates. As a result, diamond is still not considered a reference material for power electronic devices despite its superior Baliga’s figure of merit with respect to other WBG materials. This review paper will give a brief overview of some scientific and technological aspects related to the current state of the main diamond technology aspects. It will report the recent key issues related to crystal growth, characterization techniques, and, in particular, the importance of surface states aspects, fabrication processes, and device fabrication. Finally, the advantages and disadvantages of diamond devices with respect to other WBG materials are also discussed.

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“…Lett. 103, 042104 (2013) in SIMS measurements, [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] leading to systematic overestimates of the real width, similar to the case of silicon. 26 If this is the case, it is legitimate to ask how the layer thickness should be estimated from broadened SIMS profiles.…”

Section: -3mentioning

confidence: 99%

“…Doping level evaluation over micrometer-scale areas in diamond material can also be carried out by optical methods such as Raman 10 and FTIR. 11 Among these techniques, cathodoluminescence (CL) 12,13 is clearly the most sensitive 14 while ensuring a high spatial resolution since cross sectional analysis can be also carried out on FIB preparations. 15,16 However, the signal is too weak in heavily doped diamond to image the spatial distribution of dopants.…”

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confidence: 99%

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

Araújo

Alegre

Piñero

et al. 2013

Applied Physics Letters

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To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 1020 cm−3 were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p−/p++/p− multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

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Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

Cited by 11 publications

References 17 publications

High quality p‐type chemical vapor deposited {111}‐oriented diamonds: Growth and fabrication of related electrical devices

High quality p‐type chemical vapor deposited {111}‐oriented diamonds: Growth and fabrication of related electrical devices

Diamond for Electronics: Materials, Processing and Devices

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

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