Hydrogen Passivation of Iron-Related Hole Traps in Silicon

Kouketsu, Masami; Watanabe, Kojiro; Isomae, Seiichi

doi:10.4028/www.scientific.net/msf.196-201.861

Cited by 9 publications

(6 citation statements)

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“…This result has been inferred from DLTS measurements of hydrogenated samples. 110 The disappearance of the ͕Fe,B͖ DLTS peak following H implantation has also been reported by Kouketsu et al 105 In this paper, the authors have interpreted the result in terms of H passivation of the pair. This interpretation is not supported by the calculated energetics.…”

Section: Fe-acceptor Pairssupporting

confidence: 78%

“…This donor level and annealing behavior are consistent with the calculated donor level and binding energy. Note that two additional deep donor levels at E v + 0.23 eV and E v + 0.38 eV have been reported 105 following H implantation into Si samples contaminated with Fe. It is not known if these levels are related to isolated Fe i or if native defects are involved.…”

Section: A Fe I Andˆfe I H‰mentioning

confidence: 85%

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Interstitial Fe in Si and its interactions with hydrogen and shallow dopants

2007

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The properties of interstitial iron in crystalline silicon and its interactions with hydrogen, shallow acceptors ͑B, Al, Ga, In, and Tl͒, and shallow donors ͑P and As͒ are calculated from first-principles in periodic supercells. The interactions between the ͕Fe,B͖ pair and interstitial hydrogen are also examined. The configurations, electronic structures, and binding energies are predicted. The relative stability of the trigonal and orthorhombic structures of the Fe-acceptor pairs are calculated as a function of charge state and temperature. The gap levels are estimated using the marker method. The vibrational spectra of the complexes containing light impurities ͑H or B͒ are predicted.

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Section: Fe-acceptor Pairssupporting

confidence: 78%

Section: A Fe I Andˆfe I H‰mentioning

confidence: 85%

Interstitial Fe in Si and its interactions with hydrogen and shallow dopants

2007

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“…In the 3d series, the consequences of hydrogenation by remote plasma, wet chemical etching, or H implantation have been reported for Ti, 4,5 V, 4,6,7 Cr, 4,6 Fe, [8][9][10][11][12][13][14] Co, 15 Ni, 16 and Cu. [17][18][19][20] Following hydrogenation, the electrical levels of the TM impurity have been monitored by deep-level transient spectroscopy ͑DLTS͒, Laplace DLTS, or thermally stimulated capacitance ͑TSCAP͒.…”

mentioning

confidence: 99%

“…Kouketsu et al 10 studied the gap levels of interstitial iron ͑Fe i ͒ and the iron-boron pair ͕͑Fe i B s ͖͒ following H + implantation. They found that their donor levels are reduced and assigned it to H passivation.…”

mentioning

confidence: 99%

Two FeH pairs inn-type Si and their implications: A theoretical study

2008

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Experimental evidence for interstitial ͕FeH͖ pairs in n-type Si stems from thermally stimulated capacitance ͑TSCAP͒. Electron-paramagnetic resonance ͑EPR͒ data have also been interpreted in terms of ͕FeH͖ pairs. We present theoretical studies of two ͕FeH͖ pairs. The properties of the first match those of the TSCAP center but are incompatible with the EPR center. The second is a possible candidate for the EPR center. If true, this suggests that high-temperature anneals can introduce substitutional Fe in concentrations higher than commonly believed.

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“…Hydrogenation of substitutional TM centres can shift the position of the deep levels due to the impurity [164,165,166,167,168,169,170,171,172,173,174].…”

Section: Transition Metal-hydrogen Defectsmentioning

confidence: 99%