Hydrogen passivation of iron-related hole traps in silicon

Kouketsu, Masami; Isomae, Seiichi

doi:10.1063/1.363018

Cited by 46 publications

(30 citation statements)

References 12 publications

(13 reference statements)

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“…This finding, however, does not contradict the reported possible Fe-H pairs in the literature, [21][22][23][24] which were shown to anneal out at temperatures above 175 C, 22,23 agreeing with the theoretical calculations of the low binding energy of Fe-H pairs. 24 Estreicher et al 35 conjectured the formation of substitutional iron (Fe s ) in Si via the reaction of interstitial iron (Fe i ) with a pre-existing vacancy.…”

Section: Discussionsupporting

confidence: 72%

“…[13][14][15][16][17] The mechanism for this iron reduction has remained unresolved, and it has been hypothesised that it might be caused by the hydrogenation of iron in silicon. [13][14][15][16][17] This hypothesis was based on the reports that showed that the recombination activity and the concentration of interstitial iron in silicon were reduced after hydrogen incorporation, via exposure to hydrogen plasma, [18][19][20] hydrogen ion implantation, 21 wet chemical etching, 22 or deposition of PECVD silicon nitride films. 23 While there have been reports of the detection of new defect levels assigned to possible Fe-H complexes, [21][22][23] from theoretical calculations the binding energy of Fe-H pairs was found to be weak, 24 indicating the unlikelihood of the Fe-H pairs withstanding the relatively high temperatures used for firing.…”

Section: Introductionmentioning

confidence: 99%

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Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Liu

Sun

Markevich

et al. 2016

Journal of Applied Physics

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It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

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Section: Discussionsupporting

confidence: 72%

Section: Introductionmentioning

confidence: 99%

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Liu

Sun

Markevich

et al. 2016

Journal of Applied Physics

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“…Effective tidal volume was determined by the number of breaths with Vte being greater than the estimated anatomic dead space (2.2 mL/kg ideal body weight) [18]. All ventilation parameters, including respiratory rate, flow waveform, and peak inspiratory airway pressure, were recorded with the NICO monitor.…”

Section: Methodsmentioning

confidence: 99%

Continuous positive airway pressure and ventilation are more effective with a nasal mask than a full face mask in unconscious subjects: a randomized controlled trial

Oto

Kimball

et al. 2013

Crit Care

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IntroductionUpper airway obstruction (UAO) is a major problem in unconscious subjects, making full face mask ventilation difficult. The mechanism of UAO in unconscious subjects shares many similarities with that of obstructive sleep apnea (OSA), especially the hypotonic upper airway seen during rapid eye movement sleep. Continuous positive airway pressure (CPAP) via nasal mask is more effective at maintaining airway patency than a full face mask in patients with OSA. We hypothesized that CPAP via nasal mask and ventilation (nCPAP) would be more effective than full face mask CPAP and ventilation (FmCPAP) for unconscious subjects, and we tested our hypothesis during induction of general anesthesia for elective surgery.MethodsIn total, 73 adult subjects requiring general anesthesia were randomly assigned to one of four groups: nCPAP P0, nCPAP P5, FmCPAP P0, and FmCPAP P5, where P0 and P5 represent positive end-expiratory pressure (PEEP) 0 and 5 cm H2O applied prior to induction. After apnea, ventilation was initiated with pressure control ventilation at a peak inspiratory pressure over PEEP (PIP/PEEP) of 20/0, then 20/5, and finally 20/10 cm H2O, each applied for 1 min. At each pressure setting, expired tidal volume (Vte) was calculated by using a plethysmograph device.ResultsThe rate of effective tidal volume (Vte > estimated anatomical dead space) was higher (87.9% vs. 21.9%; P<0.01) and the median Vte was larger (6.9 vs. 0 mL/kg; P<0.01) with nCPAP than with FmCPAP. Application of CPAP prior to induction of general anesthesia did not affect Vte in either approach (nCPAP pre- vs. post-; 7.9 vs. 5.8 mL/kg, P = 0.07) (FmCPAP pre- vs. post-; 0 vs. 0 mL/kg, P = 0.11).ConclusionsnCPAP produced more effective tidal volume than FmCPAP in unconscious subjects.Trial registrationClinicalTrials.gov identifier: NCT01524614.

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“…However, reports have also shown that reactions between H and transition metals can form electrically active defects such as Au-H (22), Pt-H (23) and Ag-H (24). In the case of Fe, experimental reports on the effect of H on Fe are scarce and contradicting (25,26,27) which demands further examinations. Fortunately, theoretical estimates have been performed recently to predict the stability and the electrical activity of possible Fe-H complexes (28,29), but the predictions still require experimental verifications.…”

Section: Introductionmentioning

confidence: 95%

Electrically active centers introduced in p‐type Si by rapid thermal processing

Tang

Lund

Monakhov

et al. 2010

Phys. Status Solidi (c)

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On the investigation of the mechanism of phosphorus gettering of metal impurities, vacancies have been generated through proton-irradiation.The resulting irradiation-induced defects were examined for reactions with Fe after heat treatments. Based on the evolution of defect concentrations by isochronal annealings, it is found that Fe interacts with the divacancy and the vacancy-oxygen complexes, forming deep levels of 0.28 eV and 0.34 eV above the valence band edge (E V ), respectively.In the search for substitutional Fe to investigate its electrical activity and thermal stability, measurements were performed around the pro-

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Hydrogen passivation of iron-related hole traps in silicon

Abstract: Carrier lifetime and xray imaging correlations of an oxideinduced stacking fault ring and its gettering behavior in Czochralski siliconEffect of a vacuum ion gauge on the contamination of a hydrogenpassivated silicon surface

Cited by 46 publications

References 12 publications

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Continuous positive airway pressure and ventilation are more effective with a nasal mask than a full face mask in unconscious subjects: a randomized controlled trial

Electrically active centers introduced in p‐type Si by rapid thermal processing

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