Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

Huang, Yujie; Simoen, Eddy; Claeys, Corneel; Rafı́, J.M.; Clauws, Paul; Job, R.; Fahrner, W. R.

doi:10.1063/1.2227076

Cited by 11 publications

(15 citation statements)

References 12 publications

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“…Perhaps the most striking result is the reduction of these centers after 50 h annealing. In addition, the possible role of STDH centers is further supported by the data on HR magnetic Czochralski ͑MCz͒ silicon, 31 showing increasing relative contribution of STDs compared to OTDs to the created shallow donors for lower annealing temperature.…”

Section: Resultsmentioning

confidence: 71%

“…First, the C-V results obtained on n-type Si will be briefly summarized; more detailed results have been published before. [29][30][31] More attention will be given here to the data for p-type material. When comparing the impact of the doping type, a general conclusion is that the introduction rate of TDs is significantly faster in pthan in n-type Si.…”

Section: Resultsmentioning

confidence: 99%

“…The materials indicated in Table I have been hydrogen-plasma treated in a plasma-enhanced chemical vapor deposition parallelplate system at a substrate temperature of typically 260-270°C for times ranging from 30 min up to 12 h. [29][30][31][32] The interstitial oxygen concentration ͓O i ͔ was measured by Fourier transform infrared ͑FTIR͒ absorption spectroscopy. Prior to the hydrogen-plasma exposure, the silicon wafers are ultrasonically cleaned in acetone and methanol, and rinsed in deionized water to remove the organic remains on the silicon surface.…”

Section: Methodsmentioning

confidence: 99%

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What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

Simoen

Huang

et al. 2009

J. Electrochem. Soc.

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The hydrogen-plasma-accelerated formation of shallow thermal donors in silicon has been studied for a wide range of doping concentration and interstitial oxygen content [normalOnormali] by electrical and spectroscopic techniques. The plasma-hydrogenated material has been heat treated for different times in the temperature range of 275–500°C . It is shown that, besides oxygen thermal donors (OTDs), hydrogen-related shallow thermal donors (STDHs) also play a crucial role in the hydrogen-assisted creation of excess carriers. The impact of different factors on the introduction rate of the shallow donors will be discussed, whereby a strong role is played by the doping concentration and type (i.e., the Fermi-level position during the thermal anneal in air). Generally, shallow donor formation is faster in p- compared to n-type Si, which is associated with the different charge state of H. From combined deep-level transient spectroscopy and Fourier transform infrared absorption spectroscopy, it is concluded that the additional free carriers are contributed by both STDH and OTD centers, so that H not only plays a catalytic role but actively takes part in the donor formation, depending on the experimental conditions. Finally, from our data some conclusions can be made regarding the nature of the STDHs, which is still a matter of debate.

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Section: Resultsmentioning

confidence: 71%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

Simoen

Huang

et al. 2009

J. Electrochem. Soc.

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“…Under the applied process conditions discussed in Refs. 9–11, doping can be either related to hydrogen‐enhanced thermal donor formation – in this case, the so‐called classical oxygen donors – or to the formation of hydrogen‐related shallow donor complexes. Such hydrogen‐plasma‐related processes can be even used to fabricate simple device structures 12–14).…”

Section: Introductionmentioning

confidence: 99%

Defect engineering for modern power devices

Job

Laven

Niedernostheide

et al. 2012

Physica Status Solidi (a)

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Radiation‐induced defects are a common tool in the manufacturing of modern power semiconductor devices. Hydrogen‐related doping is a feasible method to introduce deep doping profiles with a low thermal budget. The hydrogen‐related donors (HDs) require radiation damage and hydrogen, which can be induced by different methods, e.g., proton implantation, helium and proton co‐implantation, or an implantation followed by a hydrogen‐plasma step. The choice of these methods significantly affects the introduction efficiency of the donors and the necessary post‐implantation thermal budget. By controlling the hydrogen‐to‐damage ratio, the manufacturing process of the HD profiles may be moved on a trade‐off between the activation efficiency and the necessary thermal budget. A low hydrogen‐to‐damage ratio leads to an increased activation of the HDs, whereas a high hydrogen‐to‐damage ratio reduces the necessary diffusion time of the hydrogen during the post‐implantation anneal. For the technical usage of hydrogen‐related doping, knowledge of an efficient process window is desirable. In this paper, we consider proton implantation, helium and proton co‐implantation, and a proton implantation followed by a hydrogen‐plasma step as different introduction methods of HD profiles with regard to the activation efficiency of the HDs and the necessary thermal budget.

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“…Such passivations could involve, for example, a thermal oxidation [7], the deposition of different PECVD SiO2 [8], SiNx [9], a-Si [10,11], or a-SiCx:H layers [12], and even hydrogen termination using immersion in HF [13,14] or HF dip [15]. In the case of highresistivity silicon for radiation detectors applications, an appropriate low-temperature passivation process is particularly desired, since this would allow studying the impact of the OTDs and other hydrogen-related shallow donors [16,17], which are created at temperatures in the range of 300 to 500°C, without interfering with the materials properties.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of surface passivation layers for bulk lifetime estimation of high resistivity silicon for radiation detectors

Rafi

Cardona-Safont

Zabala

et al. 2007

2007 Spanish Conference on Electron Devices

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With the aim to identify an appropriate lowtemperature surface passivation process that could be used for bulk lifetime estimation of high resistivity (HR) (>lkQcm) silicon for radiation detectors, different candidate passivating layers were evaluated on n-type and p-type standard Czochralski (CZ), HR magnetic Czochralski (MCZ) and HR float zone (FZ)) substrates. Minority carrier lifetime measurements were performed by means of a microwave PhotoConductance Decay single point setup. The results show that SiNX PECVD layers deposited at 200°C may be used to evaluate the impact of different processing steps and treatments on the substrate characteristics for radiation detectors.

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Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

Cited by 11 publications

References 12 publications

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

Defect engineering for modern power devices

Evaluation of surface passivation layers for bulk lifetime estimation of high resistivity silicon for radiation detectors

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