Hydrogen-Radical-Assisted Chemical Vapor Deposition of SiN Films Using Si(CH₃)₄ and NH₂CH₃

Abstract

Hydrogen radicals generated by microwave were employed in the growth of SiN films using tetramethylsilane and monomethylamine as source gases. Under appropriate experimental conditions, SiN film containing almost stoichiometrical nitrogen and small residual contents of carbon and oxygen was obtained.

Remote hydrogen plasma chemical vapor deposition of silicon–carbon thin‐film materials from a hexamethyldisilane source: Characterization of the process and the deposits

“…This allowed us to predict the chemistry of the CVD process, which was determined by the reactivity of the source compound in the atomic hydrogen environment. It is noteworthy that remote hydrogen plasma chemical vapor deposition (RHP‐CVD) has been successfully used for the fabrication of a broad class of technologically important thin‐film materials, including silicon‐based films such as amorphous hydrogenated silicon (a‐Si:H),8–13 silicon carbide (a‐Si:C:H),5, 14–20 silicon nitride (a‐Si:N:H),21, 22 and silicon carbonitride (a‐Si:N:C:H)23 and metal‐based films such as Zn:S:Se,24 Ga:As,25 Cu,26 Ti:N,27 and Ta:N 28…”

Oligomerization and Polymerization Steps in Remote Plasma Chemical Vapor Deposition of Silicon−Carbon and Silica Films from Organosilicon Sources

“…[7][8][9] This enables one to predict the chemistry of the CVD process, which is determined by the reactivity of the source compound with the hydrogen or oxygen radicals. The recent studies showed that RHP-CVD was successfully used for the fabrication of a broad class of thin- film materials comprising silicon-based films: amorphous hydrogenated silicon (a-Si:H), [10][11][12][13][14][15] silicon carbide (a-Si:C:H), 5, [16][17][18][19][20][21] silicon nitride (a-Si:N:H), [22][23][24] and metalbased films (Zn:S:Se, 25 Ga:As, 26 copper 27 ) whereas ROP-CVD was used for the production of a high-quality amorphous silica (a-SiO 2 ) films. [28][29][30][31] Although the structure and properties of the films produced by the remote plasma CVDs were studied extensively, knowledge of the chemistry involved in these processes is poor as yet.…”

“…In this case, the CVD process can be initiated in a homogeneous step, with an exclusive contribution of atomic hydrogen − or atomic oxygen. − This enables one to predict the chemistry of the CVD process, which is determined by the reactivity of the source compound with the hydrogen or oxygen radicals. The recent studies showed that RHP−CVD was successfully used for the fabrication of a broad class of thin- film materials comprising silicon-based films: amorphous hydrogenated silicon (a-Si:H), − silicon carbide (a-Si:C:H), ,− silicon nitride (a-Si:N:H), − and metal-based films (Zn:S:Se, Ga:As, copper) whereas ROP−CVD was used for the production of a high-quality amorphous silica (a-SiO 2 ) films. − Although the structure and properties of the films produced by the remote plasma CVDs were studied extensively, knowledge of the chemistry involved in these processes is poor as yet. Therefore, we have undertaken a mechanistic study related to the formation of two technologically important thin-film materials, namely, a-Si:C:H and a-SiO 2 , which in the present work are produced from hexamethyldisilane (HMDS) and trimethylsilane (TrMS) by RHP−CVD and from tetraethoxysilane (TEOS) by ROP−CVD, respectively.…”