Hydrogen radical treatment for surface oxide removal from copper

Shin, Seunghyup; Higurashi, Eiji; Furuyama, Kohta; Suga, Tadatomo

doi:10.23919/ltb-3d.2017.7947468

Cited by 3 publications

(2 citation statements)

References 4 publications

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“…However, the Cu surface is easily oxidized and contaminated during the manufacturing process, leading to poor bonding quality. To improve the bonding performance, various chemical pretreatments have been investigated to lower the Cu-Cu bonding temperature by removing surface oxides [15][16][17][18]. K.-N. Chen's group has analyzed and compared the effects of some acids on Cu-Cu bonding through the TCB process; the pretreatments include citric acid, hydrochloric acid, acetic acid, and sulfuric acid [19].…”

Section: Surface Pretreatment For Cu-cu Bondingmentioning

confidence: 99%

Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application

Huang,

Lin,

Hsiung

et al. 2023

Nanomaterials

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Advanced packaging technology has become more and more important in the semiconductor industry because of the benefits of higher I/O density compared to conventional soldering technology. In advanced packaging technology, copper–copper (Cu-Cu) bonding has become the preferred choice due to its excellent electrical and thermal properties. However, one of the major challenges of Cu-Cu bonding is the high thermal budget of the bonding process caused by Cu oxidation, which can result in wafer warpage and other back-end-of-line process issues in some cases. Thus, for specific applications, reducing the thermal budget and preventing Cu oxidation are important considerations in low-temperature hybrid bonding processes. This paper first reviews the advancements in low-temperature Cu-based bonding technologies for advanced packaging. Various low-temperature Cu-Cu bonding techniques such as surface pretreatment, surface activation, structure modification, and orientation control have been proposed and investigated. To overcome coplanarity issues of Cu pillars and insufficient gaps for filling, low-temperature Cu-Cu bonding used, but it is still challenging in fine-pitch applications. Therefore, low-temperature Cu/SiO2, Cu/SiCN, and Cu/polymer hybrid bonding have been developed for advanced packaging applications. Furthermore, we present a novel hybrid bonding scheme for metal/polymer interfaces that achieves good flatness and an excellent bonding interface without the need for the chemical mechanical polishing (CMP) process.

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Section: Surface Pretreatment For Cu-cu Bondingmentioning

confidence: 99%

Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application

Huang,

Lin,

Hsiung

et al. 2023

Nanomaterials

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“…H-radical treatment using electrically neutral hydrogen radicals, also known as atomic hydrogen or simple H*, is a procedure that removes contaminant layers or oxides by chemically reacting with the highly reactive valence electrons of the hydrogen radicals [ 25 ]. It is well known that H radicals are highly reactive reducing agents that react rapidly with the surface molecules to effectively remove the oxide layer from the material surface and activate the surface properties [ 26 ].…”

Section: Introductionmentioning

confidence: 99%

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

Yang,

Fan,

Zhang

et al. 2023

Micromachines

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In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was performed in a specially designed chamber prior to the thermal ALD-Al2O3 deposition, which improved the Al2O3/AlGaN interface with Dit of ~2 × 1012 cm−2 eV−1, and thus effectively reduced the current collapse and the dynamic Ron degradation. The devices showed good electrical performance with low Vth hysteresis and peak trans-conductance of 107 mS/mm. Additionally, when the devices operated under 25 °C pulse-mode stress measurement with VDS,Q = 40 V (period of 1 ms, pulse width of 1 μs), the dynamic Ron increase of ~14.1% was achieved.

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Low Temperature Copper-Copper Bonding in Ambient Air Using Hydrogen Radical Pretreatment

Shin

Higurashi

Suga

2019

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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Hydrogen radical treatment for surface oxide removal from copper

Cited by 3 publications

References 4 publications

Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application

Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

Low Temperature Copper-Copper Bonding in Ambient Air Using Hydrogen Radical Pretreatment

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