Hydrogen‐related defects in boron doped p‐type silicon

Abstract

Mark West considers the qualities of the analogue against the digital in the context of his work at the Centre for Architectural Structures and Technology (CAST) at Manitoba. Unable to fault the computer's ability to provide complex calculations for the fabrication of forms, he insists that the fidelity and investigative potential that he has found in the reality of the physical model and hand‐drafted drawing have yet to be surpassed. Copyright © 2008 John Wiley & Sons, Ltd.

Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon

“…A gradual annealing of C i O i is seen in Fig. 2 after heat treatments at 125 and 150 • C. When H is present with sufficient concentration, C i O i disappears already at temperatures below 150 • C [4,20,21] while temperatures above 300 • C are normally required to anneal out C i O i [22]. Accordingly, the current study supports the notion that H passivate C i O i .…”

“…Gettering and Defect Engineering in Semiconductor Technology XIV to that found in a previous study [20], where the growth of H(0.27) was accompanied by a corresponding reduction of V 2 , and the present data do not support a correlation between H(0.27) and V 2 . The nature of the E(0.32) level, when seen in n-type samples [1,2], has been established as the acceptor level of a VOH-complex, and the current data show that E(0.32) has similar emission properties as those of VOH(-/0) in n-type samples.…”

“…The heat treatments at 125 and 150 • C result in a small decrease in the amplitude of E(0.45), but higher annealing temperatures must be applied for conclusive information on its thermal stability. The level is not detected if forward bias injection is used instead of optical excitation [20], as used for all the MCTS measurements in this study, which may be a reason that only few reports on E(0.45) in p-type samples exist. This would indeed be an expected behavior of an acceptor level resulting from V 2 , as the forward injection technique charge both majority and minority carrier traps at the same time, resulting in a low occupancy for the acceptor states of V 2 , as opposed to the donor state, because the capture cross section for holes are several orders of magnitude larger than that for electrons [27].…”

Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers

“…If c-Si is exposed to hydrogen, whether during ingot growth or during wafer processing, H can easily diffuse into silicon, which can form vacancy-hydrogen complexes. 39,40 Vacancy-hydrogen can exist in several forms, the most common being the vacancy-hydrogen (VH) and V 2 H defects. 11 It has been suggested that VH has an energy level at E c -45 eV and V 2 H at E c -42 eV, 4,13 both of which can be annihilated at temperatures of 250-300 C. 11 Of the defects discussed thus far, VH and V 2 H show similar low temperature annealing behaviour to the defect presented in this work.…”