Hydrogen resist lithography and electron beam lithography for fabricating silicon targets for studying donor orbital states

Crane, Eleanor; Kölker, Alexander; Stock, Taylor J. Z.; Stavrias, N.; Saeedi, K.; Loon, M. A. W. van; Murdin, B. N.; Curson, Neil J.

doi:10.1088/1742-6596/1079/1/012010

Cited by 4 publications

(5 citation statements)

References 18 publications

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“…Further work would benefit from a more consistent contacting structure, independent of thickness and dopant variations in the monolayer such as a palladium silicide contact [ 46 ] or a series of vias. [ 47 ] The delta‐doped layers have electrical characteristics similar to graphene which has been extensively investigated for low‐dimension interconnects. We propose δ‐doped layers as an alternative to graphene for nanoscale interconnects as they are supported by advanced fabrication techniques that can produce deterministically positioned nano‐structures, exhibit a resistivity unaffected by nanoscale geometries, and are CMOS compatible.…”

Section: Discussionmentioning

confidence: 99%

Microwave Properties of 2D CMOS Compatible Co‐Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon

Chapman

Votsi

Stock

et al. 2022

Adv Elect Materials

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Low‐dimensional microwave interconnects have important applications for nanoscale electronics, from complementary metal–oxide‐semiconductor (CMOS) to silicon quantum technologies. Graphene is naturally nanoscale and has already demonstrated attractive electronic properties, however its application to electronics is limited by available fabrication techniques and CMOS incompatibility. Here, the characteristics of transmission lines made from silicon doped with phosphorus are investigated using phosphine monolayer doping. S‐parameter measurements are performed between 4–26 GHz from room temperature down to 4.5 K. At 20 GHz, the measured monolayer transmission line characteristics consist of an attenuation constant of 40 dB mm−1 and a characteristic impedance of 600 Ω. The results indicate that Si:P monolayers are a viable candidate for microwave transmission and that they have a.c. properties similar to graphene, with the additional benefit of extremely precise, reliable, stable, and inherently CMOS compatible fabrication.

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Section: Discussionmentioning

confidence: 99%

Microwave Properties of 2D CMOS Compatible Co‐Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon

Chapman

Votsi

Stock

et al. 2022

Adv Elect Materials

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“…The metallic pads are in turn electrically contacted to obtain, in conjunction with terahertz radiation from a Free Electron Laser (FEL) (λ = 31.6µm for the Si:P 1s to 2p+-transition) and D 0 X spectroscopy, an electrical signal from the 2D Si:As sheet which is a response to the coherent and nonlinear excitations of the Si:P electrons. The sample fabrication and electrical detection technique briefly described above and which we have in mind for the experiment we propose here are described in [66]. This detection technique enables the precision condensed matter samples to remain intact after exposure to a FEL pulse.…”

Section: A Experimental Proposalmentioning

confidence: 99%

Optically controlled entangling gates in randomly doped silicon

Crane

Schuckert

et al. 2019

Phys. Rev. B

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Randomly-doped silicon has many competitive advantages for quantum computation; not only is it fast to fabricate but it could naturally contain high numbers of qubits and logic gates as a function of doping densities. We determine the densities of entangling gates in randomly doped silicon comprising two different dopant species. First, we define conditions and plot maps of the relative locations of the dopants necessary for them to form exchange interaction mediated entangling gates. Second, using nearest neighbour Poisson point process theory, we calculate the doping densities necessary for maximal densities of single and dual-species gates. We find agreement of our results with a Monte Carlo simulation, for which we present the algorithms, which handles multiple donor structures and scales optimally with the number of dopants and use it to extract donor structures not captured by our Poisson point process theory. Third, using the moving average cluster expansion technique, we make predictions for a proof of principle experiment demonstrating the control of one species by the orbital excitation of another. These combined approaches to density optimization in random distributions may be useful for other condensed matter systems as well as applications outside physics.

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“…Individual interacting impurity atoms can be important for donor qubit gates, such as that proposed by Stoneham et al [1], while an important class of theoretical physics problems is produced by the Hubbard model, which relies on hopping and magnetic interactions between neighbours in chains [2]. In the case of donor impurities in a semiconductor, deterministic placement using scanning probe tips has improved greatly in recent years, but is currently limited to a small number of species of impurity (principally phosphorus and arsenic [3] in silicon [4,5] and germanium [6], and Mn in GaAs [7]). Ion implantation methods can also be used to create impurity layers in semiconductors with merits including flexibility with regards to the numerous available implantable species and far faster device fabrication times which are less costly and more easily scalable.…”

Section: Introductionmentioning

confidence: 99%

Using non-homogeneous point process statistics to find multi-species event clusters in an implanted semiconductor

et al. 2020

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The Poisson distribution of event-to-ith-nearest-event radial distances is well known for homogeneous processes that do not depend on location or time. Here we investigate the case of a nonhomogeneous point process where the event probability (and hence the neighbour configuration) depends on location within the event space. The particular non-homogeneous scenario of interest to us is ion implantation into a semiconductor for the purposes of studying interactions between the implanted impurities. We calculate the probability of a simple cluster based on nearest neighbour distances, and specialise to a particular two-species cluster of interest for qubit gates. We show that if the two species are implanted at different depths there is a maximum in the cluster probability and an optimum density profile.

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Hydrogen resist lithography and electron beam lithography for fabricating silicon targets for studying donor orbital states

Cited by 4 publications

References 18 publications

Microwave Properties of 2D CMOS Compatible Co‐Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon

Microwave Properties of 2D CMOS Compatible Co‐Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon

Optically controlled entangling gates in randomly doped silicon

Using non-homogeneous point process statistics to find multi-species event clusters in an implanted semiconductor

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