Hydrogen sensing properties of a Pd/oxide/InAlAs metamorphic-based transistor

Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment

“…The relation between k and K d could be expressed as [20]: Table 2 illustrates the adsorption time constant, pressuredependent rate constant k d values, and k values of the studied Device A under the introduction of 100, 500, and 1000 ppm H 2 /air gases. Obviously, K d and k values are increased with the increase in temperature from 300 to 473 K. In general, the activation energy (E a ) could be extracted from the Arrhenius equation [21]: where k 0 is the pre-exponential factor. The logarithmic value of k (ln k ) as a function of the reciprocal absolute temperature of Device A is illustrated in Fig.…”

Characteristics of a Pd/AlGaN/GaN Transistor Processed Using the Sensitization, Activation, and Electroless Plating (EP) Approaches

“…Furthermore, these I D values of the studied EP-gate device are superior to other HEMT-type hydrogen gas sensors. 11,25 This may be attributed to the effectively reduced surface states using the EP deposition. The well Pd/AlGaN interface could easily change the work function difference and modulate the gate Schottky barrier height.…”

Hydrogen sensing characteristics of a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by sensitization, activation, and electroless plating (EP) approaches

“…Since the energy crisis resulting from petroleum consumption, hydrogen gas has been considered a new, sustainable, and clean energy resource [15]. Accordingly, high-performance hydrogen gas sensors are urgently needed and are being extensively developed due to the explosive hazard of hydrogen [15,16].…”

“…Accordingly, high-performance hydrogen gas sensors are urgently needed and are being extensively developed due to the explosive hazard of hydrogen [15,16]. Previously, Sibased Pt-FET and Pt-Schottky diode type hydrogen sensors revealed fast-and high-sensitive response characteristics [17][18][19].…”