Hydrogen surface coverage: Raising the silicon epitaxial growth temperature

Wolff, S. H.; Wagner, S.; Bean, J. C.; Hull, R.; Gibson, J. M.

doi:10.1063/1.102149

Cited by 59 publications

(12 citation statements)

References 7 publications

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“…Several models, including defect accumulation, 25 continuous breakdown, 17,25 hydrogen-induced breakdown, [25][26][27][28][29][30] and kinetic roughening 4,6 -8,11-13,24,25 have been suggested to explain the observed epitaxial-to-amorphous transition. Defect accumulation and continuous breakdown models involve, in their simplest form, a continuous temperature-dependent increase in the concentration of lattice disorder.…”

Section: Introductionmentioning

confidence: 99%

“…It has also been pro-posed that adsorbed hydrogen from the residual background gas leads to epitaxial breakdown as H terminates dangling bonds, thereby altering the surface reconstruction template and hindering adatom migration. [25][26][27][28][29][30] Intentional H 2 dosing at Ӎ2ϫ10 Ϫ2 ML s Ϫ1 ( P H 2 ϭ2ϫ10 Ϫ6 Torr͒ during MBE Si͑001͒ growth at T s ϭ310 and 200°C with Rϭ1.0 Å s Ϫ1 decreased the epitaxial thickness from Ӎ1000 to 200 Å and from Ӎ300 to 20 Å, respectively. [25][26][27][28] Finally, there is evidence indicating that kinetic surface roughening itself plays an important role in controlling epitaxial breakdown.…”

Section: Introductionmentioning

confidence: 99%

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Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

et al. 2003

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A combination of in situ and post-deposition experiments were designed to probe surface roughening pathways leading to epitaxial breakdown during low-temperature (T s ϭ95-190°C) growth of Ge͑001͒ by molecular beam epitaxy ͑MBE͒. We demonstrate that epitaxial breakdown in these experiments is not controlled by background hydrogen adsorption or gradual defect accumulation as previously suggested, but is a growth-mode transition driven by kinetic surface roughening. Ge͑001͒ layers grown at T s տ170°C remain fully epitaxial to thicknesses hϾ1.6 m, while deposition at T s Ͻ170°C leads to a locally abrupt transition from epitaxial to amorphous growth at critical film thicknesses h 2 (T s ). Surface morphology during lowtemperature Ge͑001͒ MBE evolves via the formation of a periodic array of self-organized round growth mounds which, for deposition at T s Ͼ115°C, transform to a pyramidal shape with square bases having edges aligned along ͗100͘ directions. Surface widths w and in-plane coherence lengths d increase monotonically with film thickness h at a temperature-dependent rate. As h→h 1 (T s ), defined as the onset of epitaxial breakdown, deep cusps bounded by ͕111͖ facets form at the base of interisland trenches and we show that epitaxial breakdown is initiated on these facets as the surface roughness reaches a critical T s -independent aspect ratio w/dӍ0.02. h 1 (T s ) and h 2 (T s ) follow relationships h 1(2) ϰexp(ϪE 1(2) /kT s ), where E 1 is 0.61 eV and E 2 ϭ0.48 eV. E 1 is approximately equal to the Ge adatom diffusion barrier on Ge͑001͒ while (E 1 ϪE 2 )ϭ0.13 eV is the free energy difference between crystalline and amorphous Ge. We summarize our results in a microstructural phase map vs T s and h, and propose an atomistic growth model to explain the epitaxial to amorphous phase transition.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

et al. 2003

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“…[1][2][3] Recently, we have demonstrated that Si growth by remote plasma enhanced chemical vapor deposition ͑RPCVD͒ exhibits three distinct growth modes. 3 This work suggested that the onset of three-and twodimensional epitaxial growth is governed by di-and monohydride desorption, respectively.…”

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confidence: 99%

Effects of in situ doping from B2H6 and PH3 on hydrogen desorption and the low-temperature growth mode of Si on Si(100) by remote plasma enhanced chemical vapor deposition

Doris

Fretwell

Erskine

et al. 1997

Applied Physics Letters

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“…Since hydrogen is the most abundant residual gas in any stainless steel chamber, it has been suspected to be responsible for the breakdown of Si epitaxy at low temperatures from the beginning. Wolff et al first showed that molecular hydrogen, even with very low sticking coefficient on Si surfaces, can adversely affect the crystal structure of the grown Si film for growth temperatures below the H desorption temperature about 783 K. 2 They attributed the breakdown of epitaxy to a critical hydrogen coverage at the growth front which is attained by hydrogen segregation.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature silicon epitaxy on hydrogen-terminated Si(001) surfaces

Shen

2004

Phys. Rev. B

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Si deposition on H terminated Si(100)-2x1 and 3x1 surfaces at temperatures 300-530 K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. The post-growth annealing effect is analyzed.Hydrogen is shown to remain on the growth front up to at least 10 ML. The dihydride units on the 3x1 surfaces further suppress the Si adatom diffusion and increase surface roughness.

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Hydrogen surface coverage: Raising the silicon epitaxial growth temperature

Abstract: The role of hydride coverage in surfacelimited thinfilm growth of epitaxial silicon and germanium Equilibrium surface hydrogen coverage during silicon epitaxy using SiH4Electronic surface changes induced in silicon by hydrogen, oxygen, and cesium coverages

Cited by 59 publications

References 7 publications

Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

Effects of in situ doping from B2H6 and PH3 on hydrogen desorption and the low-temperature growth mode of Si on Si(100) by remote plasma enhanced chemical vapor deposition

Low-temperature silicon epitaxy on hydrogen-terminated Si(001) surfaces

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