Hydrogen-terminated Si(111) and Si(100) by wet chemical treatment: linear and non-linear infrared spectroscopy

Mazzara, C.; Jupille, Jacques; Zheng, Wanquan; Tanguy, M; Tadjeddine, A.; Dumas, Paul

doi:10.1016/s0039-6028(99)00266-6

Cited by 16 publications

(18 citation statements)

References 7 publications

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“…These spectra are compared with that taken in air after the crystal was dipped in HF for 5 min (solid line). The latter surface is expected to be mainly Si-H 2 terminated [35,36] and the maximum of the IR absorption band is therefore expected at 2108 cm À1 [40][41][42], in agreement with the experimental findings (solid line in Fig. 13).…”

Section: Surface Termination and Bubble Adhesionsupporting

confidence: 89%

“…The results in Fig. 12 demonstrate that the density of a 1 sites on a silicon surface during etching is strongly reduced in comparison to that of a HF-dipped surface, which is terminated with a 1 sites only [35,36]. When the potential is made more positive or the KOH concentration is increased (Figs.…”

Section: Surface Termination and Bubble Adhesionmentioning

confidence: 93%

“…Table 1 compares values of surface roughness of n-Si(1 0 0) after etching in 2 and 6 M KOH showing that steady-state roughness is observed for all materials after approximately 1 h of etching. to the Si-H vibrations region [35][36][37][38][39]. These spectra are referenced to the OCP (E 1 = À1.59 V) and the results shown correspond to increasing positive potentials.…”

Section: Surface Morphologymentioning

confidence: 99%

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Surface termination and hydrogen bubble adhesion on Si(100) surfaces during anisotropic dissolution in aqueous KOH

Haiss

Raisch

Bitsch

et al. 2006

Journal of Electroanalytical Chemistry

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The formation and growth of hydrogen bubbles on a Si(1 0 0) surface during its anisotropic etching in aqueous KOH has been investigated. Quantitative data on bubble size, lifetime and density on the etching surface was obtained and their dependence on KOH concentration, applied potential and temperature were measured. In situ FTIR measurements demonstrated a strong dependence of bubble attachment on surface termination and hence on the hydrophilicity of the Si(1 0 0) surface during etching. The formation of surface defects and the geometry of bubble imprints have been directly characterised with scanning probe microscopy. The analysis of hillock formation and statistical considerations show that the adhesion of hydrogen bubbles during anisotropic etching of silicon is a source of surface roughness and pyramid formation.

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Section: Surface Termination and Bubble Adhesionsupporting

confidence: 89%

Section: Surface Termination and Bubble Adhesionmentioning

confidence: 93%

Section: Surface Morphologymentioning

confidence: 99%

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Surface termination and hydrogen bubble adhesion on Si(100) surfaces during anisotropic dissolution in aqueous KOH

Haiss

Raisch

Bitsch

et al. 2006

Journal of Electroanalytical Chemistry

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“…Silicon substrates were cleaned by sonication in n-hexane, acetone, then ethanol (15 min each) and then, dried under a N 2 stream. Hydrogen terminated Si(111) surfaces [H-Si(111)] were prepared following the procedure described by Dumas and Kato 53,54 . A series of acid and basic hot bath cleaning steps were performed followed by a final NH 4 F treatment 54 .…”

Section: Methodsmentioning

confidence: 99%

Redox-Active Ferrocene grafted on H-Terminated Si(111): Electrochemical Characterization of the Charge Transport Mechanism and Dynamics

Fontanesi

Como

Vanossi

et al. 2019

Sci Rep

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Electroactive self-assembled monolayers (SAMs) bearing a ferrocene (Fc) redox couple were chemically assembled on H-terminated semiconducting degenerate-doped n -type Si(111) substrate. This allows to create a Si(111)|organic-spacer|Fc hybrid interface, where the ferrocene moiety is covalently immobilized on the silicon, via two alkyl molecular spacers of different length. Organic monolayer formation was probed by Laser Ablation-Inductively Coupled Plasma-Mass Spectrometry (LA-ICP-MS) and X-ray photoelectron spectroscopy (XPS) measurements, which were also used to estimate thickness and surface assembled monolayer (SAM) surface coverage. Atomic force microscopy (AFM) measurements allowed to ascertain surface morphology and roughness. The single electron transfer process, between the ferrocene redox probe and the Si electrode surface, was probed by cyclic voltammetry (CV) measurements. CVs recorded at different scan rates, in the 10 to 500 mV s −1 range, allowed to determine peak-to-peak separation, half-wave potential, and charge-transfer rate constant ( K ET ). The experimental findings suggest that the electron transfer is a one electron quasi-reversible process. The present demonstration of surface engineering of functional redox-active organometallic molecule can be efficient in the field of molecular electronics, surface-base redox chemistry, opto-electronic applications.

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“…Initially these surfaces were explored using diffraction a) Electronic mail: arapkina@kapella.gpi.ru b) Also at Technopark of GPI RAS, Moscow, 119991, Russia; Electronic mail: vyuryev@kapella.gpi.ru; http://www.gpi.ru/eng/staff s.php?eng=1&id=125 methods, the method of thermal desorption and the surface IR spectroscopy. 3,[6][7][8][9][10][11][12] Results of these researches enabled the determination of types of hydrides which form on surfaces of differently oriented Si wafers depending on composition of etchants as well as the temperature range in which their desorption is possible.…”

Section: Introductionmentioning

confidence: 99%

Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by STM, RHEED and HRTEM

Arapkina,

Krylova,

Chizh

et al. 2012

Preprint

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Structural properties of the clean Si(001) surface obtained as a result of low-temperature (470-650℃) pregrowth annealings of silicon wafers in a molecular-beam epitaxy chamber have been investigated. To decrease the cleaning temperature, a silicon surface was hydrogenated in the process of a preliminary chemical treatment in HF and NH 4 F aqueous solutions. It has been shown that smooth surfaces composed by wide terraces separated by monoatomic steps can be obtained by dehydrogenation at the temperatures 600℃, whereas clean surfaces obtained at the temperatures < 600℃ are rough. It has been found that there exists a dependence of structural properties of clean surfaces on the temperature of hydrogen thermal desorption and the process of the preliminary chemical treatment. The frequency of detachment/attachment of Si dimers from/to the steps and effect of the Ehrlich-Schwoebel barrier on ad-dimer migration across steps have been found to be the most probable factors determining a degree of the resultant surface roughness.

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Hydrogen-terminated Si(111) and Si(100) by wet chemical treatment: linear and non-linear infrared spectroscopy

Cited by 16 publications

References 7 publications

Surface termination and hydrogen bubble adhesion on Si(100) surfaces during anisotropic dissolution in aqueous KOH

Surface termination and hydrogen bubble adhesion on Si(100) surfaces during anisotropic dissolution in aqueous KOH

Redox-Active Ferrocene grafted on H-Terminated Si(111): Electrochemical Characterization of the Charge Transport Mechanism and Dynamics

Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by STM, RHEED and HRTEM

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