Hydrogenated amorphous and crystalline SiC thin films grown by RF-PECVD and thermal MOCVD; comparative study of structural and optical properties

a-Si:C:H and a-Si:N:H Thin Films Obtained by PECVD for Applications in Silicon Solar Cells

“…As the carbon content in a-Si:C:H films increased, the bands assigned to Si-CH 3 and Si-C appeared. The peak evolution at 684 cm -1 and 780 cm -1 was similar to that observed by Stapinski et al 14 The authors observed vibrations of C=O, which were previously reported by Jung et al 15 Generally, with the increase in carbon content, the intensity of SiH 2 peaks apparently decreased and carbon-related modes CH n became more visible.…”

“…14 The 1032 cm -1 and 1740 cm -1 bands were due to CH 2 (sp 3 ) bending or CH n wagging/rocking modes and vibrations of C=O. 15 In a-Si:C:H, in the spectral region between 1240 cm -1 and 1410 cm -1 , CH n bending or scissoring modes were also observed. With the increase in CH 4 partial pressure, the intensity of the SiH 2 at 2110 cm -1 decreased.…”

Amorphous hydrogenated silicon–carbon as new antireflective coating for solar cells

“…For all films deposited in inverse configuration (C) the intensity of the SiAC, SiH 2 and CH 2 modes increases apparently. The peak at 1740 cm À1 exists mainly for the normal configuration and it is assigned to the vibrations of C@O [11]. The analysis of proper peak intensities for inverse configuration reveals that the incorporation of hydrogen and carbon is more efficient than for normal configuration due to higher decomposition level of hydrocarbons.…”

Basic characteristics of the a-SiOC∶H thin films prepared by PE CVD

“…We can see a decreasing intensity of peaks related to Si-O-C 2 H 5 groups compared to the monomer spectrum. Newly increased absorption bands were assigned to the OH groups 3700÷3200 cm −1 [9], [10], [5], O 3 Si-H stretching at 2235 and 875 cm −1 [6], [11] Si-H, SiH 2 twist and bending at 800 cm −1 [5] and carbonyl stretching around 1710 cm −1 [5], [12], [13]. …”