Basic characteristics of the a-SiOC∶H thin films prepared by PE CVD

Abstract

Hydrogenated amorphous silicon oxycarbide (a-SiOC:H) thin films were prepared by plasmaenhanced chemical vapor deposition (PE CVD) using an RF helical coupling pulsed-plasma system. Films of the thickness ranging from 210 nm to 1.4 μm were deposited on silicon wafers from vinyltriethoxysilane (VTES) precursor. The thickness of plasma-polymerized films was measured by a Profilometer Talystep using a defined scratch in the layer as deep as the substrate. The deposition rate was observed with respect to the effective power used and the determined dependence could be explained on a basis of the competitive ablation and polymerization mechanisms. Very high deposition rates as far as about 110 nm/min could be reached if proper deposition conditions were tuned. The elemental composition of thin films were studied by conventional and resonant Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA) methods. The Si, C and O bulk content was correlated with the surface one determined from analyses of the photoelectron spectra using X-ray Photoelectron Spectroscopy (XPS). PACS: 81.15.Gh

Polymer Nanodot-Hybridized Alkyl Silicon Oxide Nanostructures for Organic Memory Transistors with Outstanding High-Temperature Operation Stability

“…The evolution of Si-O-Si and Si-O-C Phenyl bonds was measured at the wavenumber range of 900~1200 cm −1 from the Fourier Transform-Infrared (FT-IR) spectra ( Fig. 2d ) 43 , which also delivered the gradual increase in the aromatic C-C and C = C peaks with respect to the PVP content 44 .…”

Medium-range order in silicon oxycarbide glass by fluctuation electron microscopy

“…Prior work has shown that other bonding types including Si-H, C-H, Si-Si, and C-O are commonly found in these materials [31,[35][36][37][38] and will dramatically affect the results of this method of estimating excess carbon independent of the degree of carbon-carbon bonding present. The presence of hydrogen in particular can dramatically affect the stability of the structure [35,39,40].…”