Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties

Huran, Jozef; Valovič, A.; Kučera, M.; Kleinová, Angela; Kovačcová, Eva; Boháček, P.; Sekacova, M.

doi:10.2478/v10187-012-0049-z

Cited by 8 publications

(4 citation statements)

References 12 publications

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“…Huran et al 24 reported a similar PL reduction with the deposition temperature, while no details on the underlying mechanism for the changes in both shape and intensity of the PL emission were discussed. In our investigated samples, the PL peak position and intensity follow the increase of the optical gap value.…”

Section: Discussionmentioning

confidence: 86%

“…We took into account the characterization results described above, for the interpretation of the changes of PL properties as a function of the substrate temperature. Huran et al 24 reported a similar PL reduction with the deposition temperature, while no details on the underlying mechanism for the changes in both shape and intensity of the PL emission were discussed. In our investigated samples, the PL peak position and intensity follow the increase of the optical gap value.…”

Section: Discussionmentioning

confidence: 93%

“…To the best of authors' knowledge, only one research group examined the PL emission from a-SiC x N y thin films as a function of the deposition temperature, albeit without any discussion of the underlying mechanism and structural evolution. 24 In this contribution, we present the first in-depth analysis of the influence of deposition condition on the visible luminescence from a-SiC x N y :H z thin films deposited using the electron cyclotron resonance (ECR) PECVD technique. First, we discuss the influence of the substrate temperature on the growth process, and consequently, the induced changes in the film properties, including hydrogen concentration, film microstructure, and composition.…”

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confidence: 99%

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Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films

Khatami

Bosco

Wójcik

et al. 2018

ECS J. Solid State Sci. Technol.

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The influence of the substrate temperature and argon gas flow on the compositional, structural, optical, and light emission properties of amorphous hydrogenated silicon carbonitride (a-SiC x N y :H) thin films were studied. Thin films were fabricated using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) at a range of substrate temperatures from 120 to 170 • C (corresponding to deposition temperatures of 300 to 450 • C) in a mixture of SiH 4 , N 2 , and CH 4 precursors. Variable angle spectroscopic ellipsometer (VASE), elastic recoil detection (ERD), and Rutherford backscattering spectrometry (RBS) verified optical bandgap widening, layer densification, and an increase of the refractive index at higher substrate temperatures. The microstructure of a-SiC x N y :H z thin films was determined by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. The substrate temperature strongly affected the binding state of all atoms, and in particular, carbon atoms attached to silicon and nitrogen, as well as hydrogen-terminated bonds. We correlated the films' microstructural changes to a higher species' mobility arriving on the growin layer at higher temperatures. Photoluminescence (PL) measurements showed that the total intensity of visible light emission increased. A systematic blueshift of the centroid of the wide PL peak was observed following the increase of optical gap. 2 This is a consequence of their unique properties inherited from the combined properties of binary substructures, silicon carbide (SiC), silicon nitride (SiN), and carbonitride (CN). On the one hand, the durability and hardness of SiN structures cannot compete with those of carbon-based hard counterparts such as diamond-like carbon (DLC), CN, and SiC materials.3 On the other hand, carbon-based films do not offer the required properties for current optical designs, 4 while SiN thin films have been considered as the basis for several optoelectronic devices. 5 The protective properties of SiC x N y materials appear as an intermediate matrix to meet the demands in hard coating technology and concurrently, the tunability of SiC x N y 's electrical and optical properties raises its interest in the field of Photonics. SiC x N y structures have appeal to researchers for wear-resistant 6 and corrosion-resistant coatings, 7 and recently, for silicon-based anode materials in lithium ion batteries. 8 In addition, SiC x N y structures are used for gate dielectrics in thin film transistors 9 and diffusion barriers.10 They appear to broaden the optical parameter space required for the application of ultraviolet (UV) detectors 11,12 and the passivation layer in the third generation "all-silicon" tandem solar cells. 13,14 To this end, Chen et al. reported a direct bandgap of 3.8 eV for c-Si 2 N 4 C 15 and Azam et al. 16 investigated the tunability of the bandgap depending on the dominant phase present in the SiC x N y layer. We previously showed that the visible photoluminescence (PL) emission from ...

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Section: Discussionmentioning

confidence: 86%

Section: Discussionmentioning

confidence: 93%

mentioning

confidence: 99%

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Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films

Khatami

Bosco

Wójcik

et al. 2018

ECS J. Solid State Sci. Technol.

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“…39) The luminescence originates in band to band transitions (more precisely, transitions between tails in energy bands) and band (band tail) to discrete level transitions; the discrete levels originate in structure defects. 41) Most likely, the luminescent centers can be attributed to the band tail recombination. 42) The PL peaks of BN and SiN shift and the intensity is also changed in the SiBCN ceramic.…”

Section: Final Ceramicmentioning

confidence: 99%

Borazine-type single source precursor with vinyl to SiBCN ceramic

Chen

et al. 2018

J. Ceram. Soc. Japan

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A single source precursor of borazine derivative (B{NH[Si(CH 3) 2 CH=CH 2 ]}NH) 3 (TSAB) was designed for electronic applications. The result of thermo gravimetric analysis combined with mass spectrometry shows a ceramic yield of 60.7%. The X-ray photo-electron spectroscopy confirms that the siliconboron carbonitride (SiBCN) ceramic is obtained. The powder X-ray diffraction pattern and Raman spectra show that the graphite and a little hexagonal BN are formed after pyrolysis at 1500°C. The room temperature conductivity increases with the pyrolysis temperature, the highest is approximately 10 ¹4 (³•cm) ¹1 for SiBCN ceramic from cured TSAB pyrolyzed at 1500°C. Photoluminescence is observed in the visible range. The peaks appear at 417, 466, 498, and 593 nm (2.97, 2.66, 2.49, and 2.09 eV, respectively).

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SYNTHESIS OF MAGNETIC NANOCOMPOSITE FILMS SiCxNyFez BY PLASMA-ENHANCED CHEMICAL DECOMPOSITION OF A GASEOUS MIXTURE OF 1,1,1,3,3,3-HEXAMETHYLDISILAZANE, FERROCENE, AND HELIUM

et al. 2020

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Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties

Cited by 8 publications

References 12 publications

Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films

Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films

Borazine-type single source precursor with vinyl to SiBCN ceramic

SYNTHESIS OF MAGNETIC NANOCOMPOSITE FILMS SiCxNyFez BY PLASMA-ENHANCED CHEMICAL DECOMPOSITION OF A GASEOUS MIXTURE OF 1,1,1,3,3,3-HEXAMETHYLDISILAZANE, FERROCENE, AND HELIUM

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