Hydrogenated amorphous silicon films deposited by reactive sputtering: The electronic properties, hydrogen bonding and microstructure

Crystallization of as-deposited amorphous silicon films on glass prepared by magnetron sputtering with different substrate biases and temperatures

“…2(a)). Previous studies have established an optimal range of substrate temperature based on defect density: outside this temperature range, the defect density increases [19,20]; however, this temperature range itself may vary under different experimental conditions. The optimal substrate temperature range in the case presented here appears to be approximately 300 1C; in other words, the a-Si films deposited at 300 1C possess a relatively well-developed amorphous network.…”

“…Jun et al [17] found that substrate bias made a-Si films dense with few defects and, moreover, enhanced crystallization during the subsequent furnace annealing and the grain size in the resulting polycrystalline Si film [18]; however, these studies did not investigate how the a-Si films crystallization was influenced by different substrate biases. Substrate temperature has been reported to have an effect on the electrical properties and microstructures of a-Si films [19,20]; however, its effect on the subsequent crystallization process has not been reported. Therefore, an extensive investigation into the effect of different substrate biases and temperatures on the a-Si films crystallization is needed for a better understanding of the crystallization mechanism in a-Si films.…”

“…Apparently, the deposition condition can affect the structure of as-deposited a-Si films, leading to difference in the crystalline Si film properties. Among these conditions, substrate bias [14][15][16][17][18] and substrate temperature [19][20][21] are thought to be the predominant parameters, both of which are capable of influencing the behavior of Si ad-atoms on the film surface through ion bombardment or heating, which cause various a-Si film networks. Jun et al [17] found that substrate bias made a-Si films dense with few defects and, moreover, enhanced crystallization during the subsequent furnace annealing and the grain size in the resulting polycrystalline Si film [18]; however, these studies did not investigate how the a-Si films crystallization was influenced by different substrate biases.…”

Deposição de filmes finos de silício amorfo hidrogenado por sputtering reativo.

“…Assim, o estudos de filmes finos de a-Si:H depositados pelo sistema magnetron sputtering é de grande importância por ser uma técnica promissora de deposição deste material. Sua vantagem está na simplicidade, baixo custo, e não utilização de gases tóxicos o que justamente torna estes sistemas mais seguros e baratos [24]. Outra vantagem é o controle maior, com relação à técnica PECVD, da concentração de hidrogênio incorporada aos filmes que ocorre pelo ajuste da concentração deste gás no reator de deposição.…”

“…Pirnarbasi [24] mostrou que filmes de a-Si:H depositados por sistemas magnetron sputtering, com qualidade eletrônica tão boa quanto a do material depositado por "glow discharge", apresentam concentrações totais de hidrogênio variando de 10 a 28 at. %.…”