Hydrogenated microcrystalline silicon germanium as bottom sub-cell absorber for triple junction solar cell

Cao, Yu; Zhang, Jianjun; Li, Chao; Li, Tianwei; Huang, Zhenhua; Ni, Jian; Hu, Ziyang; Geng, Xin; Zhao, Ying

doi:10.1016/j.solmat.2013.03.004

Cited by 19 publications

(5 citation statements)

References 17 publications

(22 reference statements)

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“…Monocrystalline Ge has been used as a rear absorber in multijunction solar cells [2][3][4][5] and amorphous SiGe alloys have been used in thin film solar cells. [6][7][8] Furthermore, germanium has the possibility to exhibit direct bandgap photoluminescence [9][10][11][12] and it is relatively well compatible with the existing silicon CMOS. 10,[12][13][14] This makes it currently a frequently investigated material for monolithically integratable optoelectronic devices like nano-LEDs, 13 nanolasers, 10,14 and photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Excellent surface passivation of germanium by a-Si:H/Al2O3 stacks

Berghuis

Melskens

Macco

et al. 2021

Journal of Applied Physics

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Section: Introductionmentioning

confidence: 99%

Excellent surface passivation of germanium by a-Si:H/Al2O3 stacks

Berghuis

Melskens

Macco

et al. 2021

Journal of Applied Physics

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“…The variations in the V oc and J sc values were mostly due to the change in the Sb 2 (S 1− x Se x ) 3 bandgap, which resulted in an initial increase in the device performance of the Sb 2 (S 1− x Se x ) 3 solar cells; however, it then decreased. [ 53 ] Consequently, the Sb 2 (S 1− x Se x ) 3 solar cells could maintain a high device performance of ≈13.1% when the Se content was between 40% and 60%.…”

Section: Resultsmentioning

confidence: 99%

Theoretical Insight into High‐Efficiency Triple‐Junction Tandem Solar Cells via the Band Engineering of Antimony Chalcogenides

et al. 2021

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Antimony chalcogenides have become a family of promising photoelectric materials for high‐efficiency solar cells. To date, single‐junction solar cells based on individual antimony selenide or sulfide are dominant and show limited photoelectric conversion efficiency. Therefore, great gaps remain for the multiple junction solar cells. Herein, triple‐junction antimony chalcogenides‐based solar cells are designed and optimized with a theoretical efficiency of 32.98% through band engineering strategies with Sb2S3/Sb2(S0.7Se0.3)3/Sb2Se3 stacking. The optimum Se content of the mid‐cell should be maintained low, i.e., 30% for achieving a low defect density in an absorber layer. Therefore, Sb2(S0.7Se0.3)3‐based mid solar cells have contributed to elevate the external quantum efficiency in triple‐junction devices by the full utilization of the solar spectrum. In a single‐junction solar cell, the bandgap gradient is regulated through the Se content gradient along the depth profile of Sb2(S1−xSex)3. Besides, an increasing Se content profile provides an additional built‐in electric field for boosting hole charge carrier collection. Thus, the high charge carrier generation rate leads to a 17.96% improvement in the conversion efficiency compared with a conventional cell. This work may pave the way to boost the conversion efficiency of antimony chalcogenides‐based solar cells to their theoretical limits.

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“…Therefore, the function of the more balanced carrier drift velocity and an increased drift velocity of holes for the p-Si/graded-i-SiGe/ n-Si solar cells could not be obviously presented. Compared with the p-Si/step-i-SiGe/n-Si solar cells, the lower quantum efficiency at the long wavelength region from 800 nm to 1000 nm for the p-Si/graded-i-SiGe/n-Si solar cells under the reverse bias voltage was mainly attributed to the weaker absorption spectrum, because the i-SiGe absorption layer with the narrower energy band gap has a higher absorption coefficient and a wider absorption spectrum at the long wavelength region (Cao et al, 2013). At the same thickness of the absorption layer, the absorption spectrum at the long wavelength region for the graded i-SiGe absorption layer with the energy band gap turned from 1.3 eV to 1.5 eV was slight weaker than that of the step i-SiGe absorption layer with the energy band gap of 1.3 eV.…”

Section: Resultsmentioning

confidence: 99%