Hydrogenation of polycrystalline silicon thin film transistors by plasma ion implantation

Bernstein, J.D.; Qin, Shu; Chan, Chung; King, Tsu‐Jae

doi:10.1109/55.464804

Cited by 60 publications

(18 citation statements)

References 13 publications

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“…In the device industry, PIII has found applications in shallow junction formation (Felch et al, 2002), fabrication of silicon-on-insulator (SOI) substrates (Chu et al, 1996), conformal trench doping (Yu and Cheung, 1994), and thin film formation on SiGe (Bernstein et al, 1995). Widner et al (1970) calculated the ion flux and ion energy for ion-acoustic waves directed toward a pulsed negatively biased plate.…”

Section: Plasma Immersion Ion Implantationmentioning

confidence: 99%

Formation of Ultra-Shallow Junctions

Seebauer

Gorai

2011

Comprehensive Semiconductor Science and Technology

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Section: Plasma Immersion Ion Implantationmentioning

confidence: 99%

Formation of Ultra-Shallow Junctions

Seebauer

Gorai

2011

Comprehensive Semiconductor Science and Technology

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“…Plasma based ion implantation (PBII) [1] is an advanced technique for surface modification, which is now more and more widely used in semiconductor processing [2], such as the formation of shallow junctions, the synthesis of silicon-oninsulator (SOI) structures [3,4] and the processing of flat panel display materials [5]. In PBII, a target such as a silicon wafer is immersed in plasma and repeatedly pulsed to a high negative voltage.…”

Section: Introductionmentioning

confidence: 99%

Newly Developed Resolution Enhancement Lithography Assisted by Chemical Shrink Process and Materials for Next-Generation Devices

Terai¹,

Kumada²,

Ishibashi

et al. 2006

jjap

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Plasma based ion implantation for a planar target was simulated using the particle-in-cell model. The plasma sheath evolution and the ion implantation details (the incident ion flux, the ion impact angle and the ion impact energy) were studied for targets with different sizes, with an aim to investigate the dependence of dose uniformity on target size. The effect of plasma density and pulse width on dose distribution was studied as a plus. The simulation results show that a larger target leads to a faster and less cylindrical sheath expansion. By increasing the target size, a more uniform distribution of incident ion flux can be obtained and the normal impact effect can be improved, while the distribution of impact energy is slightly influenced. As a result, the ion implantation dose presents a better uniformity on a larger target. By increasing plasma density or pulse width, we get a higher ion implantation dose but worse dose uniformity.

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“…The semiconductor applications currently under development using PIII systems are shallow junction formation in integrated circuits, 4,5 SIMOX and ioncut SOI wafer fabrication, 6-10 doping and hydrogenation for flat-panel display thin-film transistors, 11,12 and trench sidewall doping. 13 In this paper, we report mainly application of PIII for SIMOX and ion-cut SOI wafer fabrication.…”

Section: Introductionmentioning

confidence: 99%

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

Lü

Iyer

Liu

et al. 1998

J. Electron. Mater.

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We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO 2 interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.

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Hydrogenation of polycrystalline silicon thin film transistors by plasma ion implantation

Cited by 60 publications

References 13 publications

Formation of Ultra-Shallow Junctions

Formation of Ultra-Shallow Junctions

Newly Developed Resolution Enhancement Lithography Assisted by Chemical Shrink Process and Materials for Next-Generation Devices

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

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