Newly Developed Resolution Enhancement Lithography Assisted by Chemical Shrink Process and Materials for Next-Generation Devices

Terai, Mamoru; Kumada, Teruhiko; Ishibashi, Takehiko; Hanawa, Teruo

doi:10.1143/jjap.45.5354

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…Since the bias obtained in through-pitch ∆CDs fluctuated within 6 nm, the reaction system proved to have uniform reactivity for various pitches. Terai et al [18] reported the cross-linking-type chemically shrinking material (ArF RELACS, Resolution Enhancement Lithography Assisted by Chemical Shrink) that had good through-pitch bias (~10 nm). Although the evaluation conditions and the resist material are quite different in the report, our results seem to demonstrate the advantage of the reaction system employed in REM-opt.…”

Section: Optimization Of Rem Solutionmentioning

confidence: 99%

A Resolution Enhancement Material for 193-nm Lithography Comprising 2-Hydroxybenzyl Alcohol and Poly(vinyl alcohol) with Uniform Resist Pattern Shrinkage

Nozaki

Igarashi

Yano

et al. 2011

J. Photopol. Sci. Technol.

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Section: Optimization Of Rem Solutionmentioning

confidence: 99%

A Resolution Enhancement Material for 193-nm Lithography Comprising 2-Hydroxybenzyl Alcohol and Poly(vinyl alcohol) with Uniform Resist Pattern Shrinkage

Nozaki

Igarashi

Yano

et al. 2011

J. Photopol. Sci. Technol.

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“…In lithography, the trend is always moving to smaller features and pushing for practical solutions [1][2][3][4][5] . For semiconductor manufacturing of low-k 1 process, as EUV and e-beam technologies are not yet mature for production [6][7][8] , immersion lithography is indispensable for process development and production 9 .…”

Section: Introductionmentioning

confidence: 99%

Contrast improvement with balanced diffusion control of PAG and PDB

Chen

Chang

et al. 2012

SPIE Proceedings

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For semiconductor manufacturing of k 1 <0.3 half pitch, immersion lithography is still indispensable for process development and production. As the minimum feature size reaches the resolution limit, many resolution enhancement techniques and processes are developed to meet the stringent imaging requirements. Since the optical contrast is not sufficient for low-k 1 application, the optimizing conditions for DOF, MEEF, LWR, 2D features, top-view profile, and defect become more challenging than ever for manufacturing. The low-k 1 induced poor ADI (after development inspection) end-to-end profile is deleterious to pattern fidelity that may further impact the AEI (after etching inspection).From a previous study, the photo-decomposed base (PDB) has been proven effective in enhancing the resist contrast and improving the DOF from conventional quenchers. In this paper, we study its further improvement on litho performance by controlling the diffusion lengths of the PAG and the PDB. We split the polarity and size of the PAG and PDB to control the diffusion length. The top view profile is improved from rounding to vertical if a longer diffusion length of the PDB is selected. The scattering bar printing window can also be improved in such a condition. If the PAG and the PDB have better matching controls, the MEEF, LWR, CDU, and end-to-end top view profile are improved as shown in Fig.1. Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/21/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspxFig. 1. SEM top view profile is improved from left to right with optimum PAG and PDB diffusion lengths. (From Resist 2 to Resist 9 in our article)

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Contact Hole Shrinkage: Simulation Study of Resist Flow Process and Its Application to Block Copolymers

Kim

2024

Micromachines

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For vertical interconnect access (VIA) in three-dimensional (3D) structure chips, including those with high bandwidth memory (HBM), shrinking contact holes (C/Hs) using the resist flow process (RFP) represents the most promising technology for low-k1 (where CD=k1λ/NA,CD is the critical dimension, λ is wavelength, and NA is the numerical aperture). This method offers a way to reduce dimensions without additional complex process steps and is independent of optical technologies. However, most empirical models are heuristic methods and use linear regression to predict the critical dimension of the reflowed structure but do not account for intermediate shapes. In this research, the resist flow process (RFP) was modeled using the evolution method, the finite-element method, machine learning, and deep learning under various reflow conditions to imitate experimental results. Deep learning and machine learning have proven to be useful for physical optimization problems without analytical solutions, particularly for regression and classification tasks. In this application, the self-assembly of cylinder-forming block copolymers (BCPs), confined in prepatterns of the resist reflow process (RFP) to produce small contact hole (C/H) dimensions, was described using the self-consistent field theory (SCFT). This research paves the way for the shrink modeling of the enhanced resist reflow process (RFP) for random contact holes (C/Hs) and the production of smaller contact holes.

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Newly Developed Resolution Enhancement Lithography Assisted by Chemical Shrink Process and Materials for Next-Generation Devices

Cited by 3 publications

References 15 publications

A Resolution Enhancement Material for 193-nm Lithography Comprising 2-Hydroxybenzyl Alcohol and Poly(vinyl alcohol) with Uniform Resist Pattern Shrinkage

A Resolution Enhancement Material for 193-nm Lithography Comprising 2-Hydroxybenzyl Alcohol and Poly(vinyl alcohol) with Uniform Resist Pattern Shrinkage

Contrast improvement with balanced diffusion control of PAG and PDB

Contact Hole Shrinkage: Simulation Study of Resist Flow Process and Its Application to Block Copolymers

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