Hydrogenic impurities in quantum dots under intense high-frequency laser field

Binding energy of hydrogenic impurities in quantum dots under intense laser radiation

“…It should be mentioned that similar behaviour was reported previously in Refs. [16,22] for different confinement potentials and theoretical approaches. The simplified model considers an electron moving in one-dimension and replaces the Coulomb potential by a δ-function.…”

The effects of the intense laser field on the nonlinear optical properties of a cylindrical Ga1−xAlxAs/GaAs quantum dot under applied electric field

“…This is related with the interest raised by the possibility of their application in optoelectronics. Consequently, some recent reports concerning both the linear and nonlinear optical properties in low-dimensional semiconductor systems, under intense laser field (ILF) regimes, can be found in the literature [1,12,[22][23][24][25][26][27]. There is a considerable interest in the optical phenomena based on intersubband transitions in low-dimensional semiconductor quantum systems.…”

Excitonic effects on linear and nonlinear optical absorption coefficients and refractive index changes in one-dimensional quantum dots with linear potential

“…Especially with the rapid advances in nanofabrication techniques such as molecular beam epitaxy and metal-organic chemical vapor deposition and their several variants such as chemical beam epitaxy and atomic layer epitaxy, it is possible to produce a variety of nano materials such as quantum wells, quantum wires, and quantum dots by controlling size, shape,chemical environment and composition, which further advances research on optical and electronic properties in nano materials. In the past few years linear and nonlinear optical properties associated with electronic transitions in nano materials such as quantum wells, quantum wires and quantum dots have been intensively investigated [1][2][3][4][5][6][7][8][9][10]. These properties have become the important physical foundation for many optoelectronic devices such as high-speed electro-optical modulators, far infrared photodetectors, semiconductor optical amplifiers [11][12][13].…”