Hydrostatic pressure control of the carrier density in GaAs/GaAlAs heterostructures; Role of the metastable deep levels

Mercy, J.-M.; Bousquet, C.; Robert, Jean-Louis; Raymond, André; Gregoris, G.; Beerens, J.; Portal, J. C.; Frijlink, P.; Delescluse, P.; Chevrier, J.; Linh, Nuyen T.

doi:10.1016/0039-6028(84)90326-1

Cited by 58 publications

(7 citation statements)

References 7 publications

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“…peaks with decreasing T . This induces a deionization of these donors and, as a consequence, the 2D electron density N , decreases [41]. In the calculations we have taken into account the variations of the effective mass and the energy gap with pressure.…”

Section: Case 1: T > 1 Kmentioning

confidence: 99%

“…These two parameters have also been varied experimentally by applying a hydrostatic pressure [41] and by illuminating the sample with a GaAlAs infrared light-emitting diode (LED). We have also investigated the influence of the screening of the Coulomb potential by free electrons by introducing in the calculations an oscillatory dependence of r on the filling factor v, as proposed by Dabiran et al [42].…”

Section: Case 1: T > 1 Kmentioning

confidence: 99%

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Reservoir hypothesis for the quantum hall effect

Raymond¹,

Sibari²

1994

Physica Status Solidi (b)

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It is assumed that in modulation-doped heterojunctions the 2D electron gas is in thermodynamical equilibrium with an external reservoir. In a quantizing magnetic field energy gaps appear in the density of states of the 2D system. This produces, when the magnetic field B increases, oscillations of the density of the free 2D electrons, because of the transfer of electrons into (and out of) the reservoir. It is shown that these oscillations of N , induce the formation of plateaus of the Hall resistivity exy with the exact quantization in h/ie2 and vanishing values of the resistivity exx, when the Fermi energy is between Landau levels. The model developed in the triangular well approximation accounts well for the width and shape of the Hall steps and for the eXx behaviour in a magnetic field, in a large range of temperatures.Nous supposons que, dans les heterojonctions a modulation de dopage, le gaz d'electron bidimensionnel est a l'equilibre thermodynamique avec un reservoir exterieur. En presence d'un champ magnetique quantifiant, des "gaps" d'energie apparaissent dans la densite d'etats de ce systeme 2D. Ceci provoque, lorsque le champ magnetique B croit, des oscillations de la densite N , d'electrons libres 2D, ii cause du transfert d'electron dans (et hors de) ce reservoir. Nous montrons que ces oscillations de N , induisent, lorsque I'energie de Fermi est entre deux niveaux de Landau, dune part la formation de plateaux de la resistivite de Hall exy presentant la quantification exacte en h/ie2 et d'autre part des zones dans lequelles la resistivite exx tend vers zero. Le modele developpe dans I'approximation du puits triangulaire rend bien compte, dans une large gamme de temperatures, de la largeur et de la forme des "marches" de Hall ainsi que de la variation de ex, en fonction du champ magnetique.

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Section: Case 1: T > 1 Kmentioning

confidence: 99%

Section: Case 1: T > 1 Kmentioning

confidence: 99%

Reservoir hypothesis for the quantum hall effect

Raymond¹,

Sibari²

1994

Physica Status Solidi (b)

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“…It is found that the binding energy increases with increasing external hydrostatic pressure for a given QW thickness and temperature. Mercy et al [13] have found that the carrier concentration could be decreased with increasing pressure when the samples are cooled to low temperatures in hydrostatic pressure transport studies of modulated doped QWs.…”

Section: Introductionmentioning

confidence: 98%

Simultaneous effects of pressure and temperature on donors in a GaAlAs/GaAs quantum well

Peter

Navaneethakrishnan

2008

Superlattices and Microstructures

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“…Amlan et al [12] have reported on the temperature dependence of the electron transfer between coupled quantum wells in a voltage tunable two-color quantum well infrared photodetector. Mercy et al [13] have investigated how the carrier concentration could be decreased with increasing pressure when the samples are cooled to low temperatures in hydrostatic pressure transport studies of modulated doped quantum wells. Gil et al [14] have displayed the significance of an accurate theoretical treatment of the Coulomb interaction for describing subband-to-subband transition energies in asymmetrical GaAs/GaAlAs double quantum wells under a uniaxial stress.…”

Section: Introductionmentioning

confidence: 99%