Hydrostatic-pressure effects on the donor binding energy in GaAs–(Ga, Al)As quantum dots

Pérez-Merchancano, S. T.; Paredes-Gutierrez, H.; Silva–Valencia, J.

doi:10.1088/0953-8984/19/2/026225

Cited by 51 publications

(11 citation statements)

References 25 publications

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“…It shows that the excitonic binding energy increases nearly linearly with increasing pressure. This is in agreement with the results reported by some authors [22][23][24]. It is explained that the relative distance between the electron and hole is decreased and therefore the Coulomb interaction is increased when the QD size is reduced as the pressure increases.…”

Section: Introductionsupporting

confidence: 93%

Effects of strain and hydrostatic pressure on the binding energy of excitons in wurtzite cylindrical quantum dots

Shi

Yan

2010

Phys. Status Solidi (c)

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A variational method is used to discuss the binding energies of excitons in a strained wurtzite cylindrical quantum dot by considering the hydrostatic pressure effect. Besides the built‐in electric field due to the spontaneous and piezoelectric polarizations, the strain dependence of parameters is also considered in our calculation. The results indicate that the binding energies of excitons with strain effect are higher than that without strain effect when the quantum dot height is small, but the binding energy with strain effect becomes lower than that without strain effect as the quantum dot height increases. The contribution from the built‐in electric field to the strain effect is dominant, but the contribution from the strain dependence of parameters is quite small (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionsupporting

confidence: 93%

Effects of strain and hydrostatic pressure on the binding energy of excitons in wurtzite cylindrical quantum dots

Shi

Yan

2010

Phys. Status Solidi (c)

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“…For donor and acceptor impurities in any quantum heterostructure it was found that the donor binding energy increases with increasing pressure and decreasing size of the heterostructure [13][14][15]. The effects of hydrostatic pressure on the optical transitions in self-assembled InAs/GaAs quantum dots were studied by Duque et al [16].…”

Section: Introductionmentioning

confidence: 99%

Binding energy of heavy excitons in spherical quantum dots under hydrostatic pressure

Moscoso-Moreno

Franco

Silva–Valencia

2009

Physica Status Solidi (b)

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The binding energy of heavy hole excitons in a spherical GaAs–Ga1–x Alx As quantum dot under isotropic hydrostatic pressure was calculated using the Hylleraas coordinate system and a variational approach within the approximation of the effective mass. The influences of hydrostatic pressure on the effective masses of the electron and the heavy hole, the dielectric constant and the conduction‐ and valence‐band offsets between the well and the barriers are taken into account in the calculation. The binding energy is computed as a function of hydrostatic pressure, the dot sizes and the Al(x) concentration. The results show that the binding energy derived from exciton increases with the pressure, especially for small quantum dots. Also, we have found that the binding energy increases with the pressure and the concentration for a fixed quantum dot radius, which can be useful for technological applications. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…This is the main aim of the present work. In a very recent article (appearing after the submission of the original version of the present article) Merchancano et al [25] studied the effect of hydrostatic pressure on some of the parameters (effective mass, dot radius, dielectric constant and confining potential) needed for the calculation of the binding energy. The calculations of binding energy were performed by using a variational method of the type suggested in the present work for both centre and off-centre impurities.…”

Section: Introductionmentioning

confidence: 99%

Binding energy of an off‐centre hydrogenic donor impurity in a spherical quantum dot

Mikhail

Ismail

2007

Physica Status Solidi (b)

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PACS 71.55.-i, 73.21.La A variational calculation is given of the binding energy of an off-centre hydrogenic donor impurity placed in a spherical quantum dot. The study is restricted to the ground state binding energy in the quantum dot. The cases of both infinite and finite confining potentials are considered. The variation of the binding energy as a function of the dot radius and as a function of the impurity position has been investigated. In the case of high finite confining potentials, the initial deviation of the binding energy from the result of infinite potential has been derived. The critical impurity location at which the deviation in the binding energy due to any finite confining potential changes its sign has been determined. The maximum binding energy and the dot radius at which it occurs have further been calculated for any confining potential or any impurity location.

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Hydrostatic-pressure effects on the donor binding energy in GaAs–(Ga, Al)As quantum dots

Cited by 51 publications

References 25 publications

Effects of strain and hydrostatic pressure on the binding energy of excitons in wurtzite cylindrical quantum dots

Effects of strain and hydrostatic pressure on the binding energy of excitons in wurtzite cylindrical quantum dots

Binding energy of heavy excitons in spherical quantum dots under hydrostatic pressure

Binding energy of an off‐centre hydrogenic donor impurity in a spherical quantum dot

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