A three-dimensional porous vanadium oxide was anodically deposited onto graphite substrates (denoted as
VOx⋅nnormalH2O/G
) at 0.7 V from an aqueous solution containing 25 mM
VOSO4
and 5 mM
normalH2normalO2
. Through annealing at temperatures up to
350°C
, the thermal stability of
VOx⋅nnormalH2O
preserved its porous morphology and excellent capacitive performances in 3 M KCl (pH 2.4). X-ray photoelectron spectroscopic analysis revealed the mixed valence nature of oxy-/hydroxyl-vanadium species in which the amount of
normalV4+
species was not significantly affected by varying the annealing temperature. A maximal specific capacitance of ca.
150–160Fnormalg−1
measured at
250mVnormals−1
was obtained for this porous
VOx⋅nnormalH2O
annealed between 150 and
250°C
. Only 9–17% loss in specific capacitance was found for these
VOx⋅nnormalH2O
when the scan rate of the cyclic voltammetry was increased from 25 to
250mVnormals−1
, demonstrating a typical high power property, which was never found in the
VOx⋅nnormalH2O
-based supercapacitors.