2015
DOI: 10.1016/j.jallcom.2015.08.255
|View full text |Cite
|
Sign up to set email alerts
|

Hydrothermal synthesis of WS2/RGO sheet and their application in UV photodetector

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
13
0
1

Year Published

2016
2016
2024
2024

Publication Types

Select...
5
3

Relationship

0
8

Authors

Journals

citations
Cited by 46 publications
(14 citation statements)
references
References 71 publications
0
13
0
1
Order By: Relevance
“…[1,[18][19][20] GaSe is a p-type semiconductor with an indirect bandgap of 2.05 eV at the center of the Brilliouin zone, which is only 25 meV above the conduction band minimum. [1,[18][19][20] GaSe is a p-type semiconductor with an indirect bandgap of 2.05 eV at the center of the Brilliouin zone, which is only 25 meV above the conduction band minimum.…”
Section: High-performance Self-driven Photodetector Based On Graphenmentioning
confidence: 99%
See 1 more Smart Citation
“…[1,[18][19][20] GaSe is a p-type semiconductor with an indirect bandgap of 2.05 eV at the center of the Brilliouin zone, which is only 25 meV above the conduction band minimum. [1,[18][19][20] GaSe is a p-type semiconductor with an indirect bandgap of 2.05 eV at the center of the Brilliouin zone, which is only 25 meV above the conduction band minimum.…”
Section: High-performance Self-driven Photodetector Based On Graphenmentioning
confidence: 99%
“…Quanshan Lv, Faguang Yan, Xia Wei, and Kaiyou Wang* DOI: 10.1002/adom.201700490 high-responsivity photodetecting applications. [1,[18][19][20] GaSe is a p-type semiconductor with an indirect bandgap of 2.05 eV at the center of the Brilliouin zone, which is only 25 meV above the conduction band minimum. [21] Because the difference between direct and indirect band edges is so small, the electrons can be transferred between these two minimums with a small amount of energy.…”
Section: High-performance Self-driven Photodetector Based On Graphenmentioning
confidence: 99%
“…Very recently, transition metal disulfides (TMDs: WS 2 , MoS 2 , etc. ), as one of the graphene analogue, have attracted a great deal of attention [13][14][15][16][17][18][19]. Due to the energy band gap of TMDs changing from the indirect to direct band as reducing the number of layers, a series of exotic photonic properties emerge in few-layer TMDs, which cannot be observed in the bulk TMDs.…”
Section: A N U S C R I P Tmentioning
confidence: 99%
“…In addition, a solvothermalsynthesized MoS 2 /rGO heterostructure nanosheet absorber has been reported to exhibit a maximum RL of − 31.57 dB at a thickness of 2.5 mm [39]. Similarly, WS 2 -rGO heterostructure nanosheets could also be synthesized by the solvothermal method [34]; these nanosheets have been used for electrocatalytic hydrogen evolution [40][41][42][43]. However, the dielectric loss and microwave absorption properties of WS 2 -rGO systems have not been studied.…”
Section: Introductionmentioning
confidence: 99%