2001
DOI: 10.1103/physrevb.63.224104
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Hyperfine interaction measurements inLaCrO3andLaFeO3perovskites

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Cited by 98 publications
(94 citation statements)
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“…In this approximation the only effect of the probe is to antishield the lattice contribution through the Sternheimer antishielding factor 12 , that for Cd is usually taken as: γ ∞ = −29.27 13 . PCM has been extensively used to predict EFG at Cd sites in perovskites and oxides 14,15,16,17 but calculations at the ab-initio level are rare in these systems because Cd usually enters the solid as impurity and this introduces several complications, as the effect of atomic relaxations, for example 18 . In the case of CdTiO 3 perovskite, Cd is one of the constituents of the system, so, accurate ab-initio calculations can be performed and used to check the validity of PCM aproximation.…”
mentioning
confidence: 99%
“…In this approximation the only effect of the probe is to antishield the lattice contribution through the Sternheimer antishielding factor 12 , that for Cd is usually taken as: γ ∞ = −29.27 13 . PCM has been extensively used to predict EFG at Cd sites in perovskites and oxides 14,15,16,17 but calculations at the ab-initio level are rare in these systems because Cd usually enters the solid as impurity and this introduces several complications, as the effect of atomic relaxations, for example 18 . In the case of CdTiO 3 perovskite, Cd is one of the constituents of the system, so, accurate ab-initio calculations can be performed and used to check the validity of PCM aproximation.…”
mentioning
confidence: 99%
“…This is a typical feature of perovskite and related systems. 21 Below T c Ϸ 145 K both d and u local environments experience increasing magnetic hyperfine fields upon decreasing temperature ͑inset of Fig. 2͒, presenting at 10 K values of B hf d = 3.8͑2͒T and B hf u = 4.0͑3͒T compatible with a full ferromagnetic environment of the surrounding Mn ions.…”
mentioning
confidence: 99%
“…Thermal treatment of the sample, so that the probe atoms are introduced via diffusion or melting 33 2. Through chemical reaction, i.e., in situ preparation of sample with radioisotope probe 34 3. Implantation and/or recoil implantation of radioactive ions into the sample 35 Thermal treatment of the samples leads to a welldefined metallurgical state of the impurity in the respective semiconductor and is not suitable for semiconductors having low vapor pressure, e.g., Se, Te, and their compounds.…”
mentioning
confidence: 99%