Hysteresis in Single-Layer MoS<sub>2</sub> Field Effect Transistors

Late, Dattatray J.; Liu, Bin; Matte, H. S. S. Ramakrishna; Dravid, Vinayak P.; Rao, C. N. R.

doi:10.1021/nn301572c

Cited by 1,014 publications

(929 citation statements)

References 33 publications

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“…The conductivity in these sensors is modulated by the presence of water molecules, which inhibit conduction along V atoms at flake edges 40 . Transistors made from MoS 2 also exhibit humidity-dependent hysteresis in their current-voltage behaviour, probably owing to water molecules easily adsorbing onto the hydrophilic MoS 2 surface and being polarized by the applied gate voltage 162 . Finally, MoS 2 flakes incorporated into a glassy carbon electrode in an electrochemical cell can be electrochemically reduced, and this reduced material has been shown to have electrochemical sensitivity toward glucose and biomolecules such as dopamine 163 .…”

Section: Molecular Sensing Applicationsmentioning

confidence: 99%

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

et al. 2012

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699M any two-dimensional (2D) materials exist in bulk form as stacks of strongly bonded layers with weak interlayer attraction, allowing exfoliation into individual, atomically thin layers 1 . The form receiving the most attention today is graphene, the monolayer counterpart of graphite. The electronic band structure of graphene has a linear dispersion near the K point, and charge carriers can be described as massless Dirac fermions, providing scientists with an abundance of new physics 2,3 . Graphene is a unique example of an extremely thin electrical and thermal conductor 4 , with high carrier mobility 5 , and surprising molecular barrier properties 6,7 .Many other 2D materials are known, such as the TMDCs 8,9 , transition metal oxides including titania-and perovskite-based oxides 10,11 , and graphene analogues such as boron nitride (BN) 12,13 . In particular, TMDCs show a wide range of electronic, optical, mechanical, chemical and thermal properties that have been studied by researchers for decades 9,14,15 . There is at present a resurgence of scientific and engineering interest in TMDCs in their atomically thin 2D forms because of recent advances in sample preparation, optical detection, transfer and manipulation of 2D materials, and physical understanding of 2D materials learned from graphene.The 2D exfoliated versions of TMDCs offer properties that are complementary to yet distinct from those in graphene. Graphene displays an exceptionally high carrier mobility exceeding 10 6 cm 2 V -1 s -1 at 2 K (ref. 16) and exceeding 10 5 cm 2 V -1 s -1 at room temperature for devices encapsulated in BN dielectric layers 5 ; because pristine graphene lacks a bandgap, however, fieldeffect transistors (FETs) made from graphene cannot be effectively switched off and have low on/off switching ratios. Bandgaps can be engineered in graphene using nanostructuring [17][18][19] , chemical functionalization 20 and applying a high electric field to bilayer graphene 21 , but these methods add complexity and diminish mobility. In contrast, several 2D TMDCs possess sizable bandgaps around 1-2 eV (refs 9,14), promising interesting new FET and optoelectronic devices.TMDCs are a class of materials with the formula MX 2 , where M is a transition metal element from group IV (Ti, Zr, Hf and so on), group V (for instance V, Nb or Ta) or group VI (Mo, W and so on), and X is a chalcogen (S, Se or Te). These materials form layered structures of the form X-M-X, with the chalcogen atoms in two hexagonal planes separated by a plane of metal atoms, as shown in Fig. 1a. Adjacent layers are weakly held together to form the bulk crystal in a variety of polytypes, which vary in stacking orders and metal atom coordination, as shown in Fig. 1e. The overall symmetry of TMDCs is hexagonal or rhombohedral, and the metal atoms have octahedral or trigonal prismatic coordination. The electronic properties of TMDCs range from metallic to semiconducting, as summarized in Table 1. There are also TMDCs that exhibit exotic behaviours such as charge density waves ...

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Section: Molecular Sensing Applicationsmentioning

confidence: 99%

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

et al. 2012

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“…Adsorbates, e.g., H 2 O, produce similar effects in devices based on carbon nanotubes [21], graphene [22] and MoS 2 [23], where the conduction channel is in close proximity to a highly exposed surface. Comparing Fig.…”

Section: Effect Of Atmospheric Composition On Gate Characteristicsmentioning

confidence: 97%

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

et al. 2017

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Abstract. We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N 2 and O 2 , and N 2 bubbled through liquid H 2 O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2 − 3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires.

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“…However, it has been shown that on the same substrate type variations in film morphology and film-substrate bonding strength can have major impacts on the material properties. 2,4 Furthermore, the film-substrate interaction have been shown to be non-stationary under thermal 2, 4 and electrical stresses, [6][7][8] and may differ significantly for the same substrate material but prepared differently (e.g., epitaxially grown vs. transferred). 4 Changes in surface morphology and film-substrate bonding during thermal annealing have been attributed to the unusual temperature evolution in the optical properties, 2, 4 whereas alternations in the interfacial states and surface contaminants under electrical stress have been suggested to be responsible for the instability of electrical characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…4 Changes in surface morphology and film-substrate bonding during thermal annealing have been attributed to the unusual temperature evolution in the optical properties, 2, 4 whereas alternations in the interfacial states and surface contaminants under electrical stress have been suggested to be responsible for the instability of electrical characteristics. [6][7][8] Therefore, the answer to a question like how the substrate will impact the carrier saturation velocity of a 2D material is unlikely to be unique. [9][10][11] Furthermore, it is unclear how thermal annealing or unintended thermal stress during temperature dependent measurements will affect the material properties, and how will be the interplays of above mentioned "intrinsic" (substrate) and extrinsic perturbations responding to the annealing.…”

Section: Introductionmentioning

confidence: 99%

In Situ Monitoring of the Thermal-Annealing Effect in a Monolayer of MoS2

Cao

et al. 2017

Phys. Rev. Applied

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We perform in-situ two-cycle thermal cycling and annealing studies for a transferred CVDgrown monolayer MoS2 on a SiO2/Si substrate, using spatially resolved micro-Raman and PL spectroscopy. After the thermal cycling and being annealed at 305 °C twice, the film morphology and film-substrate bonding are significantly modified, which together with the removal of polymer residues cause major changes in the strain and doping distribution over the film, and thus the optical properties. Before annealing, the strain associated with ripples in the transferred film dominates the spatial distributions of the PL peak position and intensity over the film; after annealing, the variation in film-substrate bonding, affecting both strain and doping, becomes the leading factor. This work reveals that the film-substrate bonding, and thus the strain and doping, is unstable under thermal stress, which is important for understanding the substrate effects on the optical and transport properties of the 2D material and their impact on device applications.

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Hysteresis in Single-Layer MoS₂ Field Effect Transistors

Cited by 1,014 publications

References 33 publications

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

In Situ Monitoring of the Thermal-Annealing Effect in a Monolayer of MoS2

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Hysteresis in Single-Layer MoS2 Field Effect Transistors

Cited by 1,014 publications

References 33 publications

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

In Situ Monitoring of the Thermal-Annealing Effect in a Monolayer of MoS2

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Product

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Hysteresis in Single-Layer MoS₂ Field Effect Transistors