Hysteresis of pentacene thin-film transistors and inverters with cross-linked poly(4-vinylphenol) gate dielectrics

Lim, Sang Chul; Kim, Seong Hyun; Koo, Jae Bon; Lee, Jung Hun; Ku, Chan Hoe; Yang, Yong Suk; Zyung, Taehyoung

doi:10.1063/1.2733626

Cited by 160 publications

(74 citation statements)

References 14 publications

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“…[15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] Gu et al 15,16 found that in the case of pentacene-based OFETs containing octadecyltrichlorosilanemodified SiO 2 gate dielectrics, the hysteresis observed during the full swing of a gate is due to long-lived charge traps present at the interface between semiconductor and gate dielectric, where trapping and detrapping of holes and electrons take place under an applied gate bias. [15][16][17][18] Further, water molecules in the air could create hysteresis-causing charge traps at the semiconductor/dielectric interface.…”

Section: Introductionmentioning

confidence: 97%

“…Although these results indicate that the formation of hysteresis-causing traps at the semiconductor/gate dielectric interface is strongly responsible for the observed hysteresis, the presence ͑in the dielectric bulk͒ of chemical species that cause slow polarization ͑e.g., polar functionalities, ionic impurities, and diffused water molecules͒ is also an important cause for the hysteresis observed in the OFETs. [23][24][25][26][27][28][29][30] When a polymer is used as the gate dielectric in an OFET, the end functionalities present both at the polymer surface and in the bulk have an important influence on the device performance ͑e.g., drain current, mobility, threshold voltage, and hysteresis͒. 7,31-33 Although polar functionalities, such as hydroxyl groups, are known to seriously affect the hysteresis observed during the operation of polymer-dielectric-based OFETs, 17,18,[22][23][24][25]28,29 there are only a few research papers that discuss in detail how each constituent of the polymer gate dielectric contributes to the origin and mechanism of the hysteresis.…”

Section: Introductionmentioning

confidence: 99%

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Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors

Kim

Nam

Jang

et al. 2009

Journal of Applied Physics

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We demonstrate the origin and mechanism of the hysteresis behavior that is frequently observed during the operation of organic field-effect transistors (OFETs) based on polymer gate dielectrics. Although polar functionalities, such as hydroxyl groups, present in the polymer gate dielectrics are known to induce hysteresis, there have only been a few detailed investigations examining how the presence of such end functionalities both at the polymer surface—forming an interface with the semiconductor layer—and in the bulk influences the hysteresis. In this study, we control the hydrophobicity of the polymer by varying the number of hydroxyl groups, and use an ultrathin polymer/SiO2 bilayer and a thick single polymer as the gate dielectric structure so that the hysteresis behavior is divided into contributions from hydroxyl groups present at the polymer surface and in the bulk, respectively. Electrical characterizations of the OFETs, performed both in vacuum (≈10−3 Torr) and in ambient air (relative humidity of about 40%), show that the observed hysteresis is determined by the transport of water within the polymer (i.e., the adsorption at the polymer surface and the diffusion into the bulk), which in turn is controlled by the hydrophobicity and the thickness of the polymer.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors

Kim

Nam

Jang

et al. 2009

Journal of Applied Physics

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“…PVP layer with cross-linking agent helps to reduce leakage current subsequently on/off ratio of the OFETs [20]. The cPVP as the dielectric of the OFETs may provide more stable device characteristics.…”

Section: Electrical Characteristicsmentioning

confidence: 99%

Pentacene Active Channel Layers Prepared by Spin-Coating and Vacuum Evaporation Using Soluble Precursors for OFET Applications

Ochiai

Kumar

Santhakumar

et al. 2012

ISRN Condensed Matter Physics

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Pentacene OFETs of bottom-gate/bottom-contact were fabricated with three types of pentacene organic semiconductors and cross linked Poly(4-vinylphenol) or polycarbonate as gate dielectric layer. Two different processes were used to prepare the pentacene active channel layers: (1) spin-coating on dielectric layer using two different soluble pentacene precursors of SAP and DMP; (2) vacuum evaporation on PC insulator. X-ray diffraction studies revealed coexistence of thin film and bulk phase of pentacene from SAP and thin film phase of pentacene from DMP precursors. The field effect mobility of 0.031 cm 2 /Vs and threshold voltage of −12.5 V was obtained from OFETs fabricated from SAP precursor, however, the pentacene OFETs from DMP under same preparation yielded high mobility of 0.09 cm 2 /Vs and threshold value decreased to −5 V. It reflects that the mixed phase films had carrier mobilities inferior to films consisting solely of single phase. For comparison, we have also fabricated pentacene OFETs by vacuum evaporation on polycarbonate as the gate dielectric and obtained charge carrier mobilities as large as 0.62 cm 2 /Vs and threshold voltage of −8.5 V. We demonstrated that the spin-coated pentacene using soluble pentacene precursors could be alternative process technology for low cost, large area and low temperature fabrication of OFETs.

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“…The hysteresis is mainly attributed to the dipoles which are present in the gate dielectric, and to the interaction with the ambient. A partial cross-linked process, which increases the effect of the hydroxyl groups in the gate dielectric layer, gives rise to these dipoles [67,68]. Conjointly, molecular oxygen and adsorbed water at the nanoparticle surface may induce variation in the film carrier concentration [69,70].…”

Section: Inorganic-based Tftmentioning

confidence: 99%

Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors

2015

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Flexible and transparent electronics have been studied intensively during the last few decades. The technique establishes the possibility of fabricating innovative products, from flexible displays to radio-frequency identification tags. Typically, large-area polymeric substrates such as polypropylene (PP) or polyethylene terephthalate (PET) are used, which produces new requirements for the integration processes. A key element for flexible and transparent electronics is the thin-film transistor (TFT), as it is responsible for the driving current in memory cells, digital circuits or organic light-emitting devices (OLEDs). In this paper, we discuss some fundamental concepts of TFT technology. Additionally, we present a comparison between the use of the semiconducting organic small-molecule pentacene and inorganic nanoparticle semiconductors in order to integrate TFTs suitable for flexible electronics. Moreover, a technique for integration with a submicron resolution suitable for glass and foil substrates is presented.

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Hysteresis of pentacene thin-film transistors and inverters with cross-linked poly(4-vinylphenol) gate dielectrics

Cited by 160 publications

References 14 publications

Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors

Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors

Pentacene Active Channel Layers Prepared by Spin-Coating and Vacuum Evaporation Using Soluble Precursors for OFET Applications

Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors

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