Flexible and transparent electronics have been studied intensively during the last few decades. The technique establishes the possibility of fabricating innovative products, from flexible displays to radio-frequency identification tags. Typically, large-area polymeric substrates such as polypropylene (PP) or polyethylene terephthalate (PET) are used, which produces new requirements for the integration processes. A key element for flexible and transparent electronics is the thin-film transistor (TFT), as it is responsible for the driving current in memory cells, digital circuits or organic light-emitting devices (OLEDs). In this paper, we discuss some fundamental concepts of TFT technology. Additionally, we present a comparison between the use of the semiconducting organic small-molecule pentacene and inorganic nanoparticle semiconductors in order to integrate TFTs suitable for flexible electronics. Moreover, a technique for integration with a submicron resolution suitable for glass and foil substrates is presented.

Nowadays, flexible and transparent electronics are receiving much attention in industry and research groups. Aiming at a suitable device for this technology, we present a low-cost and low-temperature integration process for ZnO nanoparticle thin-film transistors using a spray coating technique. An inverted coplanar structure with high-k gate dielectric filled with TiO2 nanoparticles is used as transistor template. The transistor's stability when exposed to dry air, wet air and ultra-violet irradiation is studied. Conjointly, a model for the observed effects based on the adsorption of oxygen and water molecules at the nanoparticle surface is proposed

No abstract

No abstract

Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs) are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high-k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the ION/IOFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V/V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates.