Hysteresis phenomenon of hydrogenated amorphous silicon thin film transistors for an active matrix organic light emitting diode

Lee, Jae‐Hoon; Nam, Woo‐Jin; Shin, Kwang-Sub; Han, Min−Koo

doi:10.1016/j.jnoncrysol.2005.11.143

Cited by 14 publications

(8 citation statements)

References 4 publications

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“…However, we made measurements at room temperature and for a short period (several sec), so that the mobile charge drift might not occur. Thus, we can conclude that the Q it (interface trapped charges) contribution to Q i is the cause of hysteresis phenomena (5).…”

Section: Fabrication Of the Tftmentioning

confidence: 86%

The Hysteresis Phenomenon in a-Si:H TFT and Poly-Si TFT in AMOLED

Park¹,

Lee²,

Shin³

et al. 2007

ECS Trans.

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The hysteresis phenomenon of both a-Si and poly-Si TFT has been studied in order to investigate the hystersis phenomenon effect on residual image of AMOLED display. The transfer characteristics of both a-Si:H TFT and poly-Si TFT were varied according to the gate voltage sweep direction due to the different initial interface trapped charges in the gate insulator. The threshold voltage in aSi:H TFT was altered by 0.23V due to hysteresis of device according to gate sweep direction while that in poly-Si TFT was varied by 0.21V due to the different gate insulator. The SiNx of 5000Å was deposited as gate insulator in a-Si:H TFT while the SiO 2 of 5000Å was deposited in poly-Si TFT. In order to suppress hystersis effect on OLED current error we proposed and fabricated a new pixel circuit. The reset voltage is applied, before a data voltage for a present frame is written, so that the data voltage sweep direction is fixed and hysteresis effect on OLED current error was successfully suppressed. Our experimental result showed that the OLED current error caused by hysteresis of TFT was successfully suppressed.

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Section: Fabrication Of the Tftmentioning

confidence: 86%

The Hysteresis Phenomenon in a-Si:H TFT and Poly-Si TFT in AMOLED

Park¹,

Lee²,

Shin³

et al. 2007

ECS Trans.

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“…We recently reported that the hysteresis of an a-Si:H TFT could cause OLED current variation at room temperature. 9 However, the temperature dependence of the hysteresis of the a-Si:H TFT was not investigated in our previous work. Because the actual operating temperature of the AMOLED panel is much higher than room temperature, investigation of the temperature dependence on the hysteresis of an a-Si:H TFT is required.…”

Section: Introductionmentioning

confidence: 96%

Investigation of the hysteresis phenomenon of an a‐Si:H TFT at an elevated temperature for AMOLED displays

Park

Lee

et al. 2007

J Soc Info Display

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The temperature dependence of the hysteresis of an a-Si:H TFT has been investigated. An a-Si:H TFT pixel driving scheme has been proposed and investigated. This scheme can eliminate changes in the organic light-emitting diode (OLED) current caused by hysteresis of an a-Si:H TFT. The V TH of the a-Si:H TFT was changed according to the gate-voltage sweep direction because of the hysteresis of the a-Si:H TFT. The variation of V TH for a a-Si:H TFT decreased from 0.41 to 0.17 V at an elevated temperature of 60°C because the sub-threshold slope (s-slope) of the a-Si:H TFT, in the reverse voltage sweep direction, increased more than in the forward voltage sweep direction due to a greater increase in the initial electron trapped charges than the hole charges. Although the OLED current variation caused by hysteresis decreased (~14%) as the temperature increased, the error in the OLED current needed to be improved in order to drive the pixel circuit of AMOLED displays. The proposed pixel circuit can apply the reset voltage (-10 V) before the data voltage for the present frame that was written to fix the sweep direction of the data voltage. The variation in the OLED current caused by hysteresis of the a-Si:H TFT was eliminated by the fixed voltage sweep direction in the proposed pixel circuit regardless of operating temperature.

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“…While high mobility is required to make high resolution and large area displays, the shift in threshold voltage (Vth) under gate bias stress (GBS) is fatal to currentdriven devices such as an active matrix organic lightemitting diode (AM-OLED) [4]. Both good electrical properties and GBS stability are needed for TFTs.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Electrical Properties and Stability of Solution-processed Amorphous Oxide Thin Film Transistors with Multi-active Layers

2018

Korean J. Met. Mater.

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We investigated the electrical properties and gate bias stress stability of solution-processed amorphous oxide thin film transistors (TFTs) with multi-stacked active layers. With the multi-layered InZnO (In:Zn = 1:1), mobility was increased from 4.6 to 21.2 cm , SS of 0.65 V/decade, and good stability, with ΔV th under PBS and NBS of +1.2 and -1.2 V, respectively. Both the electrical properties and gate bias stress (GBS) stability were better with the InZnO/InGaZnO TFT than the single-layered InZnO TFT.

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Hysteresis phenomenon of hydrogenated amorphous silicon thin film transistors for an active matrix organic light emitting diode

Cited by 14 publications

References 4 publications

The Hysteresis Phenomenon in a-Si:H TFT and Poly-Si TFT in AMOLED

The Hysteresis Phenomenon in a-Si:H TFT and Poly-Si TFT in AMOLED

Investigation of the hysteresis phenomenon of an a‐Si:H TFT at an elevated temperature for AMOLED displays

Enhanced Electrical Properties and Stability of Solution-processed Amorphous Oxide Thin Film Transistors with Multi-active Layers

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