P-type low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) integrated driver circuits are proposed for low-cost chip-on-glass (COG) panel. In order to reduce the process cost of panel, gate driver employing level-shifter, shift register and DC-DC converter is integrated by p-type polycrystalline silicon (poly-Si) TFTs. The gate drivers are composed of the level-up and level-down voltage shifters and the robust two-clock shift registers. The DC-DC converters are designed using diode-connected type charge pumps and regulators. The proposed p-type circuits were verified successfully by the simulations and the measurements.

The distribution functions of the work performed on a twodimensional Ising model under the influence of an external magnetic field which is switched on and off are studied. These distributions are calculated by means of Monte Carlo simulations for temperatures below and above, as well as close to the critical temperature, T c , and for different rates of the switching processes. For this system the Jarzynski and the Crooks fluctuation theorems are verified. It is found that Crooks fluctuation theorem provides a faster method for evaluating free energy differences in this system with respect to the Jarzynski equality. As expected, for temperatures far from T c the convergence of the results is faster than for T T c , where a slower switching rate is needed. Results obtained from the theorems of Crooks and Jarzynski are compared with thermodynamic integration calculations and it is found that they agree very well within error bars.

No abstract

A new high-aperture ratio AMOLED pixel design scheme improving OLED life-time is proposed. The V DD supply line in each pixel is eliminated and the scan line supplies V DD to a pixel, thus a high-aperture ratio of emission area is considerably increased. The increased emission area achieves a lower current density through OLED, so that the OLED degradation would be suppressed and the life-time of OLED may be improved without varying the OLED materials. We also designed a storage capacitor employing the bank layer dielectric between ITO and cathode rather than typically used V DD line.

No abstract