Hysteresis switching loops in Ag-manganite memristive interfaces

Ghenzi, N.; Sánchez, M. J.; Gomez-Marlasca, F.; Lévy, P.; Rozenberg, M. J.

doi:10.1063/1.3372617

Cited by 36 publications

(42 citation statements)

References 26 publications

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“…As was mentioned in the main text, to simulate the vacancy dynamics, we adopted the voltage-enhanced oxygen-vacancy migration model (VEOVM), which is a wellvalidated model for the RS effect [13,27]. Taking a capacitor-like device, this model considers a onedimensional conductive channel connecting the two contacts, along which oxygen vacancies can migrate through (see Fig.…”

Section: Appendix C: Veovm Modelmentioning

confidence: 99%

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Shock Waves and Commutation Speed of Memristors

et al. 2016

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Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of components is reaching a mere 10 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next-generation electronics. Significant progress has already been made in the past decade, and devices are beginning to hit the market; however, this progress has mainly been the result of empirical trial and error. Hence, gaining theoretical insight is of the essence. In the present work, we report the striking result of a connection between the resistive switching and shock-wave formation, a classic topic of nonlinear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide-based memristor device, and we extend our theory to the case of binary oxides. The shock-wave scenario brings unprecedented physical insight and enables us to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect-the commutation speed. DOI: 10.1103/PhysRevX.6.011028 Subject Areas: Condensed Matter Physics, Materials Science, Nonlinear DynamicsThe information age we live in is made possible by a physical underlayer of electronic hardware, which originates in condensed-matter physics research. Despite the great progress made in recent decades, the demand for faster and power-efficient devices continues to grow. Thus, there is urgent need to identify novel materials and physical mechanisms for future electronic-device applications. In this context, transition metal oxides (TMOs) are attracting much attention for nonvolatile memory applications [1]. In particular, TMO are associated with the phenomenon of resistive switching (RS) [2] and the memristor device [3], which is emerging as a competitive technology for nextgeneration electronics [1,[4][5][6][7][8][9][10]. The RS effect is a large, rapid, nonvolatile, reversible change of the resistance, which may be used to encode logic information. In the simplest case, one may associate high and low resistance values to binary states, but multibit memory cells are also possible [11,12].Typical systems where RS is observed are two-terminal capacitor-like devices, where the dielectric might be a TMO and the electrodes are ordinary metals. The phenomenon occurs in a strikingly large variety of systemsranging from simple binary compounds, such as NiO, TiO 2 , ZnO, Ta 2 O 5 , HfO 2 , and CuO, to more complex perovskite structures, such as superconducting cuprates and colossal magnetoresistive manganites [2,4,6,9,13].From a conceptual point of view, the main challenges for a nonvolatile memory are as follows: (i) to change its resistance within nano seconds (required for modern electronics applications), (ii) to be able to retain the state for years (i.e., n...

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Section: Appendix C: Veovm Modelmentioning

confidence: 99%

“…The phenomenon occurs in a strikingly large variety of systemsranging from simple binary compounds, such as NiO, TiO 2 , ZnO, Ta 2 O 5 , HfO 2 , and CuO, to more complex perovskite structures, such as superconducting cuprates and colossal magnetoresistive manganites [2,4,6,9,13].…”

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Shock Waves and Commutation Speed of Memristors

et al. 2016

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“…[1,2] It is nowadays widely accepted that the redistribution of oxygen vacancies near the metal oxide interface might determine the main features of the bipolar RS response. [1,[3][4][5][6] A recently proposed model [7], that succeeded in reproducing non trivial experimental findings [8], indicates that the migration of oxygen vacancies due to the local electric fields built up in a nanoscale vicinity of the metal oxide interface is at the origin of the most significant resistive changes. Each microscopic region of the sample has a resistivity that is a function of the local oxygen vacancy concentration.…”

mentioning

confidence: 98%

“…First, we simulated the application of triangular sweeps to a flat distribution of vacancies, obtaining hysteresis switching loops similar to those presented in Ref [8]. This step emulated the forming process and provided information on the resistance switching range of the simulated sample.…”

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confidence: 99%

Asymmetric pulsing for reliable operation of titanium/manganite memristors

Gomez-Marlasca¹,

Ghenzi²,

Stoliar

et al. 2011

Applied Physics Letters

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We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than 10 5 switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.

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“…In fact, if the concept of memristive systems in [2] is considered, it is a memristive system whose memristance depends on both the current and charge. Despite discussions among researchers about whether the memristor defined by Chua's paper in 1971 was found or not, seeking new kinds of memristors, their nonlinear modeling or new application areas have become new research areas [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

A methodology for memristance calculation

Mutlu¹,

Karakulak²

2014

Turk J Elec Eng & Comp Sci

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Abstract:A memristor is a newly found fundamental circuit element whose behavior can be predicted using either the charge-dependent function called memristance or the flux-dependent function called memductance. Therefore, it is important to find the memristance or memductance function of a memristor. To the best of our knowledge, there is no methodology describing how to obtain the memristance function or memristor characteristic in the literature for this purpose as of yet. In this work, a methodology is suggested to find the memristance or memductance functions.The methodology suggests first doing several experiments with a memristor using a square-wave signal to acquire data and then using an algorithm inspired by the experience on ionic memristors reported in the literature to obtain its memristance and memductance functions. The methodology is applied to calculate the memristance function and memristor characteristic of a memristor emulator. Justifications for this method are also given.

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Hysteresis switching loops in Ag-manganite memristive interfaces

Cited by 36 publications

References 26 publications

Shock Waves and Commutation Speed of Memristors

Shock Waves and Commutation Speed of Memristors

Asymmetric pulsing for reliable operation of titanium/manganite memristors

A methodology for memristance calculation

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