<i>Atomic and Ionic Impact Phenomena on Metal Surfaces</i>

Kaminsky, M.; Davies, Diane

doi:10.1063/1.3048356

Cited by 30 publications

(41 citation statements)

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“…The simulation results and the experimental data expressed in the form of the relative gas flow rate G are given in Table 1. The G is related to W cal in the same manner as the mass flow rate G exp , i.e., G ¼ W cal =W diff , where W diff can be calculated using (2).…”

Section: Resultsmentioning

confidence: 99%

“…Particularly, the reviews containing the experimental data related to the efficiency of heat exchange between a rarefied gas and a solid body provide an extensive field of non-reproducible results [2]. Thus, for example, for the He-W systems with similar gas and surface temperatures, different researchers obtain the values of energy accommodation coefficients that have a 20-fold difference (0.02 and 0.4).…”

Section: Introductionmentioning

confidence: 99%

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Simulation of the influence of surface chemical composition on internal gas flow at large Knudsen numbers

Ukhov

Borisov

Porodnov

2013

International Journal of Heat and Mass Transfer

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a b s t r a c tOn the basis of the developed model, an attempt to describe a rarefied gas flow in the cylindrical channel, whose surface chemical composition conforms with the real experimental conditions, has been made. During the modeling two cases are considered: the atomically clean silver channel surface and the surface fully covered with the adsorbate, which is simulated by oxygen according to the data of the Augerspectroscopic analysis. The gas-surface interaction process is based on the molecular dynamic principle. Thermal vibrations of the surface atoms are also considered. The obtained results of calculation are compared with experimental data.Crown

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Simulation of the influence of surface chemical composition on internal gas flow at large Knudsen numbers

Ukhov

Borisov

Porodnov

2013

International Journal of Heat and Mass Transfer

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“…The effects caused by ion bombardment of solid surfaces are quite numerous and usually rather involved; see for example the review articles by Kaminsky (1965) and Carter and Colligon (1968) which are mainly concerned with bombardment effects of metal surfaces.…”

Section: Review Of the Effects Caused By Ion Bombardment Of Semicondumentioning

confidence: 99%

Growth of epitaxial silicon layers by ion beam sputtering

Unvala

Pearmain

1970

J Mater Sci

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An ion beam sputtering technique has been developed which made possible the production of homo-epitaxial Si layers by sputtering for the first time. The A+ ion beam source was considerably modified from the initial design of Hill and Nelson (1965) to give the purity needed for the production of semiconductor layers without mass analysis of the ion beam. Typically, a 12keV 4mA beam of A+ ions struck a Si target at 60° incidence and ejected sputtered atoms were deposited at a rate of 200 A/min on a heated Si(111) substrate placed just above the target. Epitaxial layers were grown at temperatures above about 700°C and the structural quality of these layers was evaluated by transmission electron microscopy. Layers grown at temperatures in excess of 900°C contained only dislocation defects normally to a density of about 8x109 cm-2, whereas epitaxial layers grown at lower temperatures also exhibited stacking faults and microtwinning. The existence of defects in epitaxial layers has been correlated with the severity of bombardment of the substrate during deposition by secondary ions from the target. In all cases, the bombardment conditions were severe enough to continually transform a thin 100 A thick surface region of the newly-deposited sputtered layer to a disordered state. The subsequent reordering characteristics of this disordered surface controlled not only the prominence of individual defects in any epitaxial layer but also whether a layer was single crystal. Electrical properties of epitaxial layers were also strongly dependent on bombardment conditions allowing only high resistivity N-type layers to be grown independent of target conductivity-type and resistivity.The ion beam sputtering properties of Si and GaAs have also been investigated. The similarity in results for single crystal targets to those for polycrystalline targets was again attributed to ion-bombardment-induced surface disorder. Stoichiometric layers of GaAs could only be obtained from polycrystaline targets.

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“…Calculations by B0ttiger and Winterbon (64) and others (65,66) have shown that a large fraction of the incident ions are reflected away from the surface (see process 6- Figure 1). Their calculations for the reflection coefficient of 4 He + are shown in Figure 17. These results indicate that a significant fraction of the initial kinetic energy is not deposited in the target material.…”

Section: Variation Of the Sputteringmentioning

confidence: 99%

“…The electrons can then be treated by statistical mechan- Figure 4. It is convenient to describe the interatomic potential, U(R), with the same functional form as Equation 4. This has been accomplished by Bohr (21) who estimated the interaction energy between two atoms by the formula:…”

Section: U(r)mentioning

confidence: 99%

Physical Sputtering: A Discussion of Experiment and Theory

Winters

1976

Advances in Chemistry

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The theory of sputtering of amorphous and polycrystalline materials has been further developed. Experimental results for the energy, mass, and angular dependence of sputtering yields and recent experiments on the sputtering of chemi sorbed gas and sputtering by molecular ions illustrate sev eral effects that are important in determining sputtering yields and, in particular, the relationship of these effects to Sigmund theory. There are several mechanisms which might lead to discrepancies between theory and experiment.

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Atomic and Ionic Impact Phenomena on Metal Surfaces

Cited by 30 publications

References 0 publications

Simulation of the influence of surface chemical composition on internal gas flow at large Knudsen numbers

Simulation of the influence of surface chemical composition on internal gas flow at large Knudsen numbers

Growth of epitaxial silicon layers by ion beam sputtering

Physical Sputtering: A Discussion of Experiment and Theory

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