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 u x-ray photoelectron spectroscopic study of remote plasma enhanced chemical vapor deposition of silicon nitride on sulfide passivated InP

Lau, Woon Ming; Jin, Sang‐Man; Wu, Xiaowei; Ingrey, S.

doi:10.1116/1.584977

Cited by 48 publications

(34 citation statements)

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“…4 before 60 s sputtering P-diffusion related peaks for both as-deposited and annealed conditions are found close to the detection limit of XPS. 36 After sputtering for long time the substrate related peak becomes more pronounced as the electrons come from the InP surface after etching most of the Ta 1Àx Z x O as evidenced after 120-180 s sputtering XPS spectra. 33 The binding energy of 128.5 was taken as the reference for P2p 3/2 which was in good agreement with the reported results of the literature.…”

Section: Resultsmentioning

confidence: 95%

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

Mahata

Yoon

et al. 2015

J. Mater. Chem. C

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Metal-oxide-semiconductor (MOS) capacitors with an amorphous Ta 1Àx Zr x O composite gate dielectric film and a SiO 2 passivation layer were fabricated on an indium phosphide (InP) substrate. To investigate the impact of the passivation layer, the interfacial chemical, physical and electrical properties of the Ta 1Àx Zr x O/InP and Ta 1Àx Zr x O/SiO 2 /InP MOS structures were studied in detail. Electrical conductivity measurements combined with chemical bonding analysis using X-ray photoelectron spectroscopy (XPS) and electron dispersive spectroscopy (EDS) were conducted in order to evaluate the suitability of a Ta 1Àx Zr x O alloy as a gate dielectric film for an InP substrate. XPS results showed that the Ta 1Àx Zr x O film retained its insulating characteristics and was thermally stable even after annealing at 500 1C. However, Fermi-level pinning and significant diffusion of indium through the Ta 1Àx Zr x O were observed. The diffusion of In was remarkably reduced after introducing the SiO 2 passivation layer, which resulted in an overall reduction in interfacial layer thickness. Parallel conductance contour measurements showed that the SiO 2 passivation layer resulted in unpinning of the Fermi-level. The introduction of a SiO 2 passivation layer with the Ta 1Àx Zr x O composite gate dielectric film was found to provide remarkably improved dielectric performance, which was mainly attributed to reduced In diffusion and the passivation of interfacial and bulk dielectric defects.

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Section: Resultsmentioning

confidence: 95%

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

Mahata

Yoon

et al. 2015

J. Mater. Chem. C

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“…The same fitting model was used for both P 2p and In 3d 5/2 spectra and resulted in the detection of fewer surface components (Fig. 21 The surface composition was also studied after (NH 4 ) 2 S solution immersion with a prior oxide removal step (H 2 SO 4 ). The analysis of the P 2p spectrum after (NH 4 ) 2 S solution treatment shows the presence of the P-In substrate and oxidized P peak with additional surface components but without any trace of P 0 and P (2± )+ suboxides.…”

Section: Resultsmentioning

confidence: 99%

Study of InP Surfaces after Wet Chemical Treatments

Cuypers

Dorp

Tallarida

et al. 2013

ECS J. Solid State Sci. Technol.

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The influence of different wet chemical treatments (HCl, H 2 SO 4 , NH 4 OH) on the composition of InP surfaces is studied by using synchrotron radiation photoemission spectroscopy (SRPES). It is shown that a significant amount of oxide remains present after immersion in a NH 4 OH solution which is ascribed to the insolubility of In 3+ at higher pH values. Acidic treatments efficiently remove the native oxide, although components like P 0 , In 0 and P (2± )+ suboxides are observed. Alternatively, the influence of a passivation step in (NH 4 ) 2 S solution on the surface composition was investigated. The InP surface after immersion into (NH 4 ) 2 S results in fewer surface components, without detection of P 0 and P (2± )+ suboxides. Finally, slight etching of InP surfaces in HCl/H 2 O 2 solution followed by a native oxide removal step, showed no significant effect on the surface composition.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-06-08 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-06-08 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-06-08 to IP

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“…Lau and coworkers [9][10][11][12][13][14][15] have published several articles, dealing with various structural and electrical properties of ultrathin dielectric films on semiconductors using surface charging. Thomas et al [16] were able to separate various electrically uncoupled regions on an integrating circuit surface using the surface charging effect; and similar applications were also reported by Ermolieff et al [17] and Bell and Joubert [18]; while Miller et al applied the technique to separate the XPS signals of the fiber from the exposed matrix at fractured surfaces [19].…”

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XPS analysis with pulsed voltage stimuli

2006

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We record XPS spectra while applying 0 to +10 V or 0 to À10 V square pulses to the sample rod, which normally results in twinning of all peaks at correspondingly increased (for +10 V) or decreased (for À10 V) binding energies. For poorly conducting samples, like silicon oxide layer on a silicon substrate, the twinned peaks appear at different energies due to differential charging, which also vary with respect to the frequency of the applied pulses. Moreover, the frequency dependence varies with the thickness and can be correlated with the capacitance of the oxide layer. The technique is simple and can lead to extract important information related with dielectric properties of surface structures in a totally non-contact fashion. Ó 2005 Elsevier B.V. All rights reserved.Keywords: X-ray photoelectron spectroscopy; Differential charging; Silicon dioxide layers; Capacitance X-ray photoelectron spectra are normally recorded while the samples are electrically tied to the spectrometer ground to avoid disturbances due to contact potentials and/or charging. Even then, positive charging (commonly referred as surface charging or differential charging) is unavoidable in analysis of poorly conducting samples as a result of incomplete neutralization [1][2][3][4][5][6]. Use of a lowenergy electron flood gun, for neutralization, has been very successful for most applications [7,8]. Over-neutralization (using the flood gun) leading to excess negative charging is also encountered.Utilization of surface charging (mostly negative) phenomenon, for elucidating chemical and/or structural parameters of various materials, has also been reported. Lau and coworkers [9][10][11][12][13][14][15] have published several articles, dealing with various structural and electrical properties of ultrathin dielectric films on semiconductors using surface charging. Thomas et al. [16] were able to separate various electrically uncoupled regions on an integrating circuit surface using the surface charging effect; and similar applications were also reported by Ermolieff et al. [17] and Bell and Joubert [18]; while Miller et al. applied the technique to separate the XPS signals of the fiber from the exposed matrix at fractured surfaces [19]. Use of surface charging for lateral differentiation of mesoscopic layers and for depth profiling in 1-10 nm thin layers have also recently been reported [20,21]. By adopting a different strategy, we have also reported that by application of a small (1-10 V) bias we can control the differential charging to obtain a variety of analytical information about surface structures [23][24][25].The technique of biasing the sample goes back (three decades) to the early days of XPS [1,2]. However, use of it for extracting chemical and/or structural information is not extensive. In a recent application Havercroft and Sherwood [22] showed that biasing the sample holder, with a large negative d.c. voltage (25-100 V), could be used to identify chemical differences in oxide films on an aluminum alloy. In our previous reports ...

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I n s i t u x-ray photoelectron spectroscopic study of remote plasma enhanced chemical vapor deposition of silicon nitride on sulfide passivated InP

Cited by 48 publications

References 1 publication

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

Study of InP Surfaces after Wet Chemical Treatments

XPS analysis with pulsed voltage stimuli

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I n s i t u x-ray photoelectron spectroscopic study of remote plasma enhanced chemical vapor deposition of silicon nitride on sulfide passivated InP

Cited by 48 publications

References 1 publication

The impact of atomic layer deposited SiO2passivation for high-k Ta1−xZrxO on the InP substrate

The impact of atomic layer deposited SiO2passivation for high-k Ta1−xZrxO on the InP substrate

Study of InP Surfaces after Wet Chemical Treatments

XPS analysis with pulsed voltage stimuli

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Product

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The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate