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 u vaporization of very low molecular weight resists using 1/2 nm diameter electron beams

Isaacson, M.; Muray, A.

doi:10.1116/1.571180

Cited by 108 publications

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“…This explains the discrepancy between the apparent size of the hole and the beam diameter, and suggests that the resolution of the process is much better than 5 nm. Isaacson & Muray (1981) confirmed the high resolution by writing structures as small as 1.5 nm in thinner NaCl films.…”

Section: F a B R I C A T I O N O F Structures W I T H D I M E N S I Osupporting

confidence: 58%

High resolution electron beam fabrication: a brief review of experimental studies that began at Cambridge University in 1962

Broers

1985

Journal of Microscopy

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SUMMARY Electron beam fabrication studies with the scanning electron microscope began at Cambridge University in 1962. Early experiments demonstrated that structures could be made that were smaller than could be made by other methods, but it was not until several years later at IBM Research that useful devices with these smaller dimensions were made. It was even later (1981) before the resolution limits of electron beam lithography with conventional resist were measured. It is now understood that with conventional resists, electron/resist interaction effects limit the minimum structure size to about 10 nm. Newer methods that involve the direct sublimation of materials such as NaCl and LiF allow structures down to about 1 nm to be made.

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Section: F a B R I C A T I O N O F Structures W I T H D I M E N S I Osupporting

confidence: 58%

High resolution electron beam fabrication: a brief review of experimental studies that began at Cambridge University in 1962

Broers

1985

Journal of Microscopy

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“…STEM lithography has also been done with conventional resists, such as poly(methyl methacrylate) (PMMA) 20 and calixarene 21 , and in low-molecularweight resists that are sublimated by electron-beam irradiation, such as NaCl. 3 The results on PMMA and calixarene showed 6 nm features and a 15 nm half-pitch. The results on NaCl showed ~2 nm features and 2 nm half-pitch, but with excessive exposure dose (~500 times higher than conventional resists).…”

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confidence: 92%

Resolution Limits of Electron-Beam Lithography toward the Atomic Scale

et al. 2013

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We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread function at 200 keV. Furthermore, we measured the energy loss in the resist using electron-energy-loss spectroscopy.

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“…10). This exposure dose is about one order of magnitude less than that required to vaporize fine-grain alkali-halide films (Isaacson and Muray, 1981). This dose advantage is inherent because of the efficiency of radiolysis over vaporization and is possible in this microscope because of the oxygen ambient in the -1 x lop7 torr total background pressure at the sample.…”

Section: Kyser and Others Have Performed Montementioning

confidence: 97%

Ultra‐High‐Resolution electron‐beam lithography

Craighead¹

1985

J. Elec. Microsc. Tech.

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KEY WORDS Electron-beam lithography, TEWSTEM, Polymethylmethacrylate ABSTRACT A conventional TEWSTEM has been used for the fabrication of -10 nm-size structures by electron-beam lithography. The electron microscope provides a versatile tool for studying the lithographic process with control of the beam energy, current, and profile combined with the ability to image both the probe and fabricated structures. Straightforward techniques are described for generating ultrasmall structures for physics and device experiments on both bulk substrates and on thin films. New resist processes and the effects of electron-beam energy as studied by these techniques are discussed.

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I n s i t u vaporization of very low molecular weight resists using 1/2 nm diameter electron beams

Abstract: Articles you may be interested inLowtemperature electron cyclotron resonance chemical vapor deposition of very low resistivity TiN for InP metallization using metalorganic precursors Modified lithium fluoride films as a resist for nanometer electron beam lithography AIP Conf.

Cited by 108 publications

References 0 publications

High resolution electron beam fabrication: a brief review of experimental studies that began at Cambridge University in 1962

High resolution electron beam fabrication: a brief review of experimental studies that began at Cambridge University in 1962

Resolution Limits of Electron-Beam Lithography toward the Atomic Scale

Ultra‐High‐Resolution electron‐beam lithography

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