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Patterning at the 1–2 nm size scale has been demonstrated with self-developing metal halide resists using a subnanometer diameter 100 keV electron beam. Electron energy loss spectroscopy during lithographic exposure indicates removal of the halide ion first, followed by displacement of the metal ions. Under appropriate exposure of AlF3, we have demonstrated that aluminum metal structures can be fabricated in situ. Nanometer scale patterns have been replicated into Si3N4 via reactive ion etching using AlF3 as the resist mask.

Using dose resolved energy loss and energy filtered imaging, the mechanism of a new high resolution resist, AlF3, is examined. It is found that exposure induces mass loss including the displacement of Al ions. From the energy filtered images, it is observed that the Al coats the walls of the exposed area. Further, it is demonstrated that high resolution patterns exposed in AlF3 can be replicated into Si3N4 substrates.

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