In situassembled homojunctions in solution grown Pb_1 xFe_xS nanoparticle films

Abstract

Vacancy induced p–n homojunctions have been successfully grown in situ from an aqueous solution bath in Pb1−xFexS (x = 0.25 and 0.50) semiconductor nanoparticle films. An abrupt change of DC bias to the substrate during growth has been used as a technique to fabricate p–n junctions. (I–V) and (C–V) measurements confirm the formation of homojunctions in the nanoparticle thin films.

Production of semiconducting gold–DNA nanowires by application of DC bias

“…Compared with earlier research on the production of DNA nanotubes, our method described here is substantially simpler to grow similar types of DNA nanostructures. We have previously reported that DC bias can be used for changing the majority carrier type in semiconductors [17][18][19]. This was achieved by using a capacitor circuit to manipulate the positive and negative charged species ions in the solution.…”