A bottom-up
approach starting with the development of new Hf precursors for plasma-enhanced
atomic layer deposition (PEALD) processes for HfO2 followed
by in situ thin-film surface characterization of HfO2 upon
exposure to reactive gases via near-ambient-pressure X-ray photoelectron
spectroscopy (NAP-XPS) is reported. The stability of thin films under
simulated operational conditions is assessed, and the successful implementation
of HfO2 dielectric layers in metal–insulator–semiconductor
(MIS) capacitors is demonstrated. Among the series of newly synthesized
mono-guanidinato-tris-dialkyl-amido class of Hf precursors, one of
them, namely, [Hf{η2-(
i
PrN)2CNEtMe}(NEtMe)3], was representatively
utilized with oxygen plasma, resulting in a highly promising low-temperature
PEALD process at 60 °C. The new precursors were synthesized in
the multigram scale and thoroughly characterized by thermogravimetric
analyses, revealing high and tunable volatility reflected by appreciable
vapor pressures and accompanied by thermal stability. Typical ALD
growth characteristics in terms of linearity, saturation, and a broad
ALD window with constant growth of 1.06 Å cycle–1 in the temperature range of 60–240 °C render this process
very promising for fabricating high-purity smooth HfO2 layers.
For the first time, NAP-XPS surface studies on selected HfO2 layers are reported upon exposure to reactive H2, O2, and H2O atmospheres at temperatures of up to
500 °C revealing remarkable stability against degradation. This
can be attributed to the absence of surface defects and vacancies.
On the basis of these promising results, PEALD-grown HfO2 films were used as dielectric layers in the MIS capacitor device
fabrication exhibiting leakage current densities less than 10–7 A cm–2 at 2 MV cm–1 and permittivities of up to 13.9 without postannealing.