1998
DOI: 10.1116/1.580959
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In situ conductivity characterization of oxide thin film growth phenomena on microhotplates

Abstract: Through the use of silicon micromachining, we have developed a microhotplate structure capable of reaching temperatures in excess of 500 °C, onto which thin films have been selectively grown via metalorganic chemical vapor deposition. The microhotplate structure contains surface electrical contacts which permit conductance measurements to be made on films during and after deposition, and therefore presents some unique opportunities for the in situ characterization of growing films as well as for novel gas sens… Show more

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Cited by 19 publications
(5 citation statements)
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“…The integration of SnO 2 sensing films on microsubstrates making gas sensors portable started only after surface micromachining of microhotplates became viable. The self-lithographic method of material deposition on the microhotplate surface became a good approach, as no lithographic steps were required to pattern the sensing films [3].…”
Section: Introductionmentioning
confidence: 99%
“…The integration of SnO 2 sensing films on microsubstrates making gas sensors portable started only after surface micromachining of microhotplates became viable. The self-lithographic method of material deposition on the microhotplate surface became a good approach, as no lithographic steps were required to pattern the sensing films [3].…”
Section: Introductionmentioning
confidence: 99%
“…The TiO 2 films deposited using TN discussed above are too resistive for such monitoring, given the contact geometry used in these experiments. Even with interdigitated comb contacts, limited success was attained for monitoring the growth of TN-deposited films. To demonstrate real-time conductance measurement on a growing film, TiO 2 was grown using TTIP as the CVD precursor.…”
Section: Resultsmentioning
confidence: 99%
“…The fact that the slope of the plots is considerably steeper in the early stages of film growth is not completely unexpected since measured resistance is related to both film thickness (which is increasing with time) and the chemoresistive nature of the film that allows changes in the ambient environment to change the film's electrical properties. In the early stages of film growth, the deposited material is similar in nature to a nanoparticle film in that the increased surface area-to-volume ratio of the growing film makes the device more sensitive to gases than a one with thicker film. , In the case of TiO 2 deposited using TTIP, this may be due to the increased sensitivity of the device toward the reaction products such as isopropyl alcohol, propylene, and water.
9 Conductance data obtained during the deposition of TiO 2 using titanium(IV) isopropoxide at 400 °C.
…”
Section: Resultsmentioning
confidence: 99%
“…1 The operating temperature of the sensing layer and power dissipation of gas sensor can be lowered by using the MEMS based silicon structures. [2][3][4] Micro heaters are implanted into gas sensors to warmth the sensing layer to a requisite temperature for getting improved sensitivity [5][6][7][8] and response time. Various semiconducting oxides such as Co 3 O 4 , SnO 2 have been reported on high operating temperature (350 C-450 C) with high power consumption.…”
Section: Introductionmentioning
confidence: 99%