In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces

Abstract

In situ electrical characterization is used to study the interface properties and the contact penetration during reactions at metal/semiconductor interfaces. Ni contacts were formed in situ by deposition through a removable molybdenum shadow mask on molecular beam epitaxy-grown n-type GaAs(100) c(4×4) As-rich surfaces. Annealing at 300 °C resulted in NixGaAs (x≈3) formation. Subsequent exposure of the NixGaAs to an As4 flux at 350 °C resulted in the formation of NiAs at the surface and the epitaxial regrowth of GaAs at the Ni3GaAs/GaAs interface. The Schottky barrier height (φbn=0.68 V, as deposited) increased with NixGaAs formation (φbn=0.87 V) and decreased slightly with subsequent As4 exposure (φbn=0.85 V). A thin buried n+ marker layer was used to determine changes in the metal/semiconductor interface position from in situ capacitance–voltage measurements. The marker-layer movement demonstrated consumption and subsequent regrowth of GaAs beneath the contact. The ideality factor obtained from current–voltage measurements for the contacts on regrown GaAs was ⩽1.11, which is indicative of the high electrical quality of the regrown GaAs.

Probing Occupied States of the Molecular Layer in Au−Alkanedithiol−GaAs Diodes

“…Compared to I − V , IPE signals are not dominated by the presence of a small fraction of low barrier regions so that the measured IPE barrier is more representative of the average barrier height across the diode. In C − V , the barrier height is obtained by extrapolating the band bending of the depletion layer to the junction interface and, therefore, can be overestimated …”