<i>In situ</i>photogenerated hydroxyl radicals in the reaction atmosphere for the accelerated crystallization of solution-processed functional metal oxide thin films

Gómez-López, Alicia; Rivas, Yadira Andrea; Lopez-Fajardo, Sergio; Jiménez, Ricardo; Ricote, J.; Pecharromán, Carlos; Montero, I.; Bretos, Íñigo; Calzada, M. L.

doi:10.1039/d2tc05447g

Cited by 7 publications

(5 citation statements)

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“…These chemically reactive species can accelerate the formation of the intermediate amorphous metal oxide film and, therefore advance the formation of the crystalline phase. We call this strategy film crystallization induced by photochemically generated reactive radicals [11,23,[27][28][29]. Oxygen (O 2 ) atmospheres are the most used during the UV-irradiation of solution-deposited metal oxide thin films.…”

Section: Low-temperature Solution Processing Of Crystalline Films Ass...mentioning

confidence: 99%

“…By using this strategy (Fig. 8), crystalline metal oxide films have been prepared directly on plastic substrates in a low-temperature regime, between 250 °C and 350 °C, observing a gradual increase in the processing temperature as the complexity of the metal oxide increases (from binary to ternary or quaternary metal oxides: e.g., the photocatalytic Bi 2 O 3 , the multiferroic BiFeO 3 or the ferropiezoelectric Pb(Zr x Ti 1−x )O 3 ) [29].…”

Section: Low-temperature Solution Processing Of Crystalline Films Ass...mentioning

confidence: 99%

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Low-temperature sol–gel methods for the integration of crystalline metal oxide thin films in flexible electronics

Bretos

Jiménez

Ricote

et al. 2023

J Sol-Gel Sci Technol

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The development of low-temperature sol–gel (solution) processes for the fabrication of crystalline metal oxide thin films has become a key objective in the emerging Flexible Electronics. To achieve this target, crystalline oxide films need to be deposited on flexible substrates, which have degradation temperatures below 350 °C (e.g., polymers or textile). This achievement would be a step towards improving the performance of the flexible device, making feasible applications now restrained (e.g. smart-skin, flexible-displays or solar-cells) and whose performance is associated to the functional properties of the crystalline oxide (e.g., ferroelectricity, pyroelectricity or piezoelectricity). However, this is a challenge because the crystallization of these oxides usually occurs at high temperatures, over 600 °C. This paper shows an overview to the solution strategies devised in our group for the low-temperature fabrication of crystalline metal oxide thin films, mostly ferroelectric perovskites (e.g., BiFeO3, PbTiO3 or Pb(Zr,Ti)O3). We have made use of UV-light as an alternative energy source to the thermal energy conventionally used to obtain the crystalline oxide. High photosensitive sol–gel solutions have been synthesized and the solution-deposited layers irradiated with UV-excimer lamps. A precise control of the photoreactions occurring during the irradiation of these layers has been carried out with the aim of advancing the formation of a high-densified, defect-free amorphous metal oxide film that easily can be converted into crystalline at temperatures compatible with the use of polymer substrates. Graphical Abstract

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Section: Low-temperature Solution Processing Of Crystalline Films Ass...mentioning

confidence: 99%

Section: Low-temperature Solution Processing Of Crystalline Films Ass...mentioning

confidence: 99%

Low-temperature sol–gel methods for the integration of crystalline metal oxide thin films in flexible electronics

Bretos

Jiménez

Ricote

et al. 2023

J Sol-Gel Sci Technol

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“…[21][22][23] Recently, Bretos et al utilized a state-ofthe-art low-temperature solution-based synthesis method to pro-duce thin-film-based Bi oxide compounds for flexible ferroelectric devices. [24,25] This family of bismuth layered structure ferroelectric (BLSF) oxide compounds exhibits desirable properties for various applications, including dielectric, ferroelectric, and piezoelectric properties such as Bi 4 Ti 3 O 12 (BIT), PbBi 2 Nb 2 O 9 (PBN), BiFeO 3 (BFO), and Na 0.5 Bi 4.5 Ti4O 15 (NBT). [24,26] This library of materials can produce lead-free ferroelectric and piezoelectric layers compared with lead-based, lead zirconate titanate (PZT) materials.…”

Section: Introductionmentioning

confidence: 99%

Multi‐Functional Atomically Thin Oxides from Bismuth Liquid Metal

Guo,

Nguyen,

Syed

et al. 2023

Adv Funct Materials

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Atomically thin, mechanically flexible, memory‐functional, and power‐generating crystals play a crucial role in the technological advancement of portable devices. However, the adoption of these crystals in such technologies is sometimes impeded by expensive and laborious synthesis methods, as well as the need for large‐scale, mechanically stable, and air‐stable materials. Here, an instant‐in‐air liquid metal printing process utilizing liquid bismuth (Bi) is presented, forming naturally occurring, air‐stable, atomically thin, mechanically flexible nanogenerators and ferroelectric oxides. Despite the centrosymmetric nature of the monoclinic P21/c system of achieved α‐Bi2O3‐δ the high kinetics of liquid metal synthesis leads to the formation of vacancies that disrupt the symmetry which is confirmed by density functional theory (DFT) calculations. The polarization switching is measured and utilized for ferroelectric nanopatterning. The exceptional attributes of these atomically thin multifunctional stable oxides, including piezoelectricity, mechanical flexibility, and polarizability, present significant opportunities for developing nano‐components that can be seamlessly integrated into a wide range of devices.

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“…22 Solution processes have emerged as a popular method for producing metal oxides with high reliability, versatility and efficiency. 23,24 The benefits of the solution process include high process simplicity, low manufacturing costs and highthroughput fabrication, making it an attractive option for the fabrication of oxide semiconductors. 25,26 Previously, we reported a ZTO TFT using a solution process and investigated its variable range hopping conduction behavior.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

et al. 2023

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In situphotogenerated hydroxyl radicals in the reaction atmosphere for the accelerated crystallization of solution-processed functional metal oxide thin films

Abstract: We propose a disruptive method to proccess metal oxide thin films whereby hydroxyl radicals (•OH) are photogenerated in-situ from the atmosphere where the corresponding solution-deposited layers are UV-irradiated. The reaction...

Cited by 7 publications

References 57 publications

Low-temperature sol–gel methods for the integration of crystalline metal oxide thin films in flexible electronics

Low-temperature sol–gel methods for the integration of crystalline metal oxide thin films in flexible electronics

Multi‐Functional Atomically Thin Oxides from Bismuth Liquid Metal

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

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In situphotogenerated hydroxyl radicals in the reaction atmosphere for the accelerated crystallization of solution-processed functional metal oxide thin films

Abstract: We propose a disruptive method to proccess metal oxide thin films whereby hydroxyl radicals (•OH) are photogenerated in-situ from the atmosphere where the corresponding solution-deposited layers are UV-irradiated. The reaction...

Cited by 7 publications

References 57 publications

Low-temperature sol–gel methods for the integration of crystalline metal oxide thin films in flexible electronics

Low-temperature sol–gel methods for the integration of crystalline metal oxide thin films in flexible electronics

Multi‐Functional Atomically Thin Oxides from Bismuth Liquid Metal

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnOxdopant layer

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Product

Resources

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Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer