In situ resistance measurement of the p-type contact in InP–InGaAsP coolerless ridge waveguide lasers

Abstract

Scanning voltage microscopy (SVM) is employed to measure the voltage division—and resulting contact resistance and power loss—at the p-In0.53Ga0.47As–p-InP heterojunction in a working InP–InGaAsP laser diode. This heterojunction is observed to dissipate ∼35% of the total power applied to the laser over the operating bias range. This in situ experimental study of the parasitic voltage division (and resulting power loss and series contact resistance) highlights the need for a good p-type contact strategy. SVM technique provides a direct, fast and in situ measurement of specific contact resistance, an important device parameter.

Thermoreflectance Imaging of Semiconductor Lasers With a Numerical Thermal Model

“…In our device, the upper 200 nm of the ridge is composed of a highly doped p+ InGaAs region to achieve ohmic contacts and minimize contact resistance. However, by scanning the voltage along the laser facet Kuntze et al have shown that while minimizing metal-semiconductor contact resistance this approach generates a large voltage drop and thus heat generation at the p+ -p interface [19]. This can be characterized by another contact resistance, which they found to be 6x10 -9 Ωm 2 .…”

Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching

“…Recently Atomic Force Microscopy (AFM) equipped with sensitive capacitance [1,2], conductivity [3] or resistance [4] sensors was used to measure electrical parameters of semiconductors. The most straightforward is KPFM method, which directly measures electrostatic forces.…”