<i>In situ</i> study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

Hestroffer, Karine; Leclère, C.; Cantelli, V.; Bougerol, Catherine; Renevier, H.; Daudin, B.

doi:10.1063/1.4721521

Cited by 49 publications

(62 citation statements)

References 40 publications

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“…3(c)). Qualitatively, such RHEED pattern evolution is similar to creation of crystalline silicon nitride and its subsequent amorphization as observed by Hestroffer et al 10,14 So different RHEED images in Figs. 3(a) and 3(c) indicate different microstructures of surfaces on which GaN NWs grow.…”

Section: Resultssupporting

confidence: 54%

“…10 Slower nucleation and lower density of NWs were observed on partially amorphous silicon nitride films while no growth of GaN NWs was found on crystalline sapphire substrate under the same growth conditions. HRTEM studies of annealed sapphire and EDX studies of GaN/Al 2 O 3 interface excludes local conversion of amorphous Al 2 O 3 under the nitrogen flux into AlN that would speed up nucleation of GaN nanowires.…”

Section: Resultsmentioning

confidence: 89%

“…Hestroffer et al 10 studied in-situ nucleation of GaN NWs on silicon substrate and found a negligible incorporation of gallium as long as the silicon nitride film covering the substrate remained crystalline. Then, efficient GaN nucleation was observed after amorphization of the silicon nitride film.…”

Section: Introductionmentioning

confidence: 98%

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Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy

Sobanska

Kłosek

Borysiuk

et al. 2014

Journal of Applied Physics

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We report on plasma-assisted molecular beam epitaxial growth of GaN nanowires (NWs) on Si(111) substrates with a thin amorphous Al2O3 buffer layer deposited by atomic layer deposition. Comparison of nucleation kinetics shows that presence of amorphous Al2O3 buffer significantly enhances spontaneous nucleation of GaN NWs. Slower nucleation was observed on partially amorphous silicon nitride films. No growth of NWs was found on sapphire substrate under the same growth conditions which we explain by a low density of defects on monocrystalline substrate surface where NWs may nucleate. Our finding shows that tuning of substrate microstructure is an efficient tool to control rate of self-induced nucleation of GaN NWs.

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Section: Resultssupporting

confidence: 54%

Section: Resultsmentioning

confidence: 89%

See 1 more Smart Citation

Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy

Sobanska

Kłosek

Borysiuk

et al. 2014

Journal of Applied Physics

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“…While NWs on a silicon substrate consist of a desirable platform for low-cost and scalable devices, the spontaneous formation of the insulating SiN x layer at the semiconductor/substrate interface limits their applicability, impeding heat dissipation and electrical conduction. 16 It has been recently demonstrated that the NW growth on metal thin films helps to avoid such issues, hence reducing the potential barrier for carrier flow and allowing increased current injections with lower Joule heating. [17][18][19][20][21] As many efforts have been made in the UV III-nitride NW community to bring NW technology to a practical application, it is of particular importance to study the diode T j of such devices to evaluate the best configuration for efficient heat dissipation through the heat sink substrate, prevent overheating, short lifespan, and reduced light intensity.…”

Section: Introductionmentioning

confidence: 99%

Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires

Priante

ElAfandy

Prabaswara

et al. 2018

Journal of Applied Physics

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The diode junction temperature (Tj) of light emitting devices is a key parameter affecting the efficiency, output power, and reliability. Herein, we present experimental measurements of the Tj on ultraviolet (UV) AlGaN nanowire (NW) light emitting diodes (LEDs), grown on a thin metal-film and silicon substrate using the diode forward voltage and electroluminescence peak-shift methods. The forward-voltage vs temperature curves show temperature coefficient dVF/dT values of −6.3 mV/°C and −5.2 mV/°C, respectively. The significantly smaller Tj of ∼61 °C is measured for the sample on the metal substrate, as compared to that of the sample on silicon (∼105 °C), at 50 mA, which results from the better electrical-to-optical energy conversion and the absence of the thermally insulating SiNx at the NWs/silicon interface. In contrast to the reported higher Tj values for AlGaN planar LEDs exhibiting low lateral and vertical heat dissipation, we obtained a relatively lower Tj at similar values of injection current. Lower temperatures are also achieved using an Infrared camera, confirming that the Tj reaches higher values than the overall device temperature. Furthermore, the heat source density is simulated and compared to experimental data. This work provides insight into addressing the high junction temperature limitations in light-emitters, by using a highly conductive thin metal substrate, and it aims to realize UV AlGaN NWs for high power and reliable emitting devices.

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“…The development of two-dimensional (2D) X-ray detectors has facilitated the in situ XRD studies of strain relaxation during heteroepitaxy, [39][40][41][42][43][44][45][46][47] NW growth, [48][49][50][51][52][53] and QD growth. [54][55][56][57][58][59][60][61][62] One of the advantages of XRD as an in situ tool is its wide application range as a consequence of the weak interaction of X-rays with matter.…”

Section: Introductionmentioning

confidence: 99%

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Takahasi

2018

Jpn. J. Appl. Phys.

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The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III-V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid-solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.

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In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

Cited by 49 publications

References 40 publications

Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy

Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy

Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

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