<i>In situ</i> surface modification and growth of ultrasmooth amorphous carbon films by direct carbon ion-beam deposition

Sohn, M. H.; Kim, S. I.

doi:10.1557/jmr.1999.0357

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…1 The adhesion of amorphous carbon films to silicon substrates was greatly enhanced by in situ surface modification using 400 and 500 eV C − beams. 1 The adhesion of amorphous carbon films to silicon substrates was greatly enhanced by in situ surface modification using 400 and 500 eV C − beams.…”

Section: Introductionmentioning

confidence: 99%

Studies of electron energy loss near edge structure at the interface between Si and amorphous carbon films deposited by direct carbon ion beams

Sohn¹,

Kim²,

Siangchaew

1999

J. Mater. Res.

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Using direct carbon ion beam deposition, in situ surface modification was performed by an energetic C − beam (400 and 500 eV) prior to amorphous carbon film growth to enhance adhesion of the film. It has been found from high-resolution electron microscopy that the C and Si mixing layer at the interface causes strong adhesion of the film. Electron energy loss spectroscopy was used to investigate chemical states of the C and Si mixing layer at the interface. The carbon composition profile in silicon showed that the thickness of the mixing layer was about 30 nm for 500 eV modification (at 200°C). Silicon L-edge study at the C/Si interface found C-Si bond formation only at the surface of silicon over 2-3-nm-thick layers. The C-Si bond formation is a function of C − ion impingement energy. The thickness of the bonding layer decreased to less than 1 nm for 400 eV surface modification. When the substrate was modified by a 500-eV C − beam at 800°C, the thickness of the SiC layer was about 10 nm. C-Si bond formation was enhanced by the supplemental thermal energy.

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Section: Introductionmentioning

confidence: 99%

Studies of electron energy loss near edge structure at the interface between Si and amorphous carbon films deposited by direct carbon ion beams

Sohn¹,

Kim²,

Siangchaew

1999

J. Mater. Res.

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Sandwich atomic structure in tetrahedral amorphous carbon: Evidence of subplantation model for film growth from hyperthermal species

Zhao

2001

Phys. Rev. B

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High-resolution transmission electron microscopy ͑HRTEM͒ was used to characterize the cross-sectional and planar atomic structures and bonding states of highly tetrahedrally bonded amorphous carbon ͑ta-C͒ films, particularly concentrating on the surface layer and interface between substrate and pure ta-C film. A ''sandwich'' cross-sectional structure was found to be existing in ta-C grown from hyperthermal carbon species, and can be expressed as A/B/A layer-by-layer stacks. The interface ͑A͒ was shown to be very thick ͑ϳ40 nm͒, and consisted of sp 2 -bonded carbon domains and quasicontinuous two-dimensional layers. The initial pure carbon layer on silicon substrate exhibits relatively ordered atomic configuration, which can be attributed to the presence of graphitelike structure. The surface layer ͑A͒ was investigated in detail by using both cross-sectional and planar HRTEM observations. Results indicated a large number of ordered structure existed in the surface, in the manner of entangled ribbons that were identified to be sp 2 -bonded glassy carbon. The ordered sp 2 -bonded surface layer is proposed to form immediately while stopping deposition, i.e., the final stage of film growth, due to thermal spike-induced stress relaxation on surface. The interior film ͑B͒ is predicted to possess higher sp 3 -bond content than that measured by electron-energy-loss spectrum. In addition, slow positron annihilation, as well as a classical-trajectory calculation concerning the projected range R p and range straggling ⌬R p of carbon species implantation into silicon substrate, were conducted for further investigating and interpreting the observed atomic structures in surface, interior film, and interface. The fact that sp 2 -bonded surface and interface are present in a primarily sp 3 -bonded film gives a direct corroboration of subplantation model and compressive stress mechanism for sp 3 -bonded film growth from hyperthermal species.

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Super-smooth indium–tin oxide thin films by negative sputter ion beam technology

Sohn¹,

Kim²,

Kim³

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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A study for the bias control of indium-tin-oxide films synthesized by cesium assisted radio frequency magnetron sputtering J. Vac. Sci. Technol. A 21, 1069 (2003 10.1116/1.1584038 Room-temperature growth of crystalline indium tin oxide films on glass using low-energy oxygen-ion-beam assisted deposition Influence of the target-substrate distance on the properties of indium tin oxide films prepared by radio frequency reactive magnetron sputtering Electrical, optical, and structural properties of indium-tin-oxide thin films deposited on polyethylene terephthalate substrates by rf sputtering An ionized physical vapor deposition, negative sputter ion beam ͑NSIB͒ technology, is described for the deposition of super-smooth indium-tin oxide ͑ITO͒ thin films with highly transparent and conductive properties at near-room temperature deposition. A negatively charged sputter ion beam is produced by retrofitting an ITO magnetron sputtering cathode with a cesium vapor injector capable of releasing controlled amounts of cesium vapor into the plasma during deposition. Using this highly energetic deposition process, ITO thin films have been obtained at near-room temperature ͑less than 50°C͒ with super-smooth surface ͑Ͻ1 nm rms͒, resistivity of 4ϫ10 Ϫ4 ⍀ cm, and transmittance higher than 85% ͑at wavelength 550 nm͒ on polycarbonate substrates.

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In situ surface modification and growth of ultrasmooth amorphous carbon films by direct carbon ion-beam deposition

Cited by 3 publications

References 8 publications

Studies of electron energy loss near edge structure at the interface between Si and amorphous carbon films deposited by direct carbon ion beams

Studies of electron energy loss near edge structure at the interface between Si and amorphous carbon films deposited by direct carbon ion beams

Sandwich atomic structure in tetrahedral amorphous carbon: Evidence of subplantation model for film growth from hyperthermal species

Super-smooth indium–tin oxide thin films by negative sputter ion beam technology

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