2014
DOI: 10.1063/1.4900633
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In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams

Abstract: In situ synchrotron radiation photoelectron spectroscopy was performed during the oxidation of the Ge(100)-2 × 1 surface induced by a molecular oxygen beam with various incident energies up to 2.2 eV from the initial to saturation coverage of surface oxides. The saturation coverage of oxygen on the clean Ge(100) surface was much lower than one monolayer and the oxidation state of Ge was +2 at most. This indicates that the Ge(100) surface is so inert toward oxidation that complete oxidation cannot be achieved w… Show more

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Cited by 9 publications
(33 citation statements)
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“…Nevertheless, the investigation of a thick Ge oxide film does not help us to fully understand the oxygen-contacted Ge-Ge dimers layer. Another method, an in vacuo process using supersonic molecular oxygen beams, only produces the 1+ and 2+ oxidation states in the sub-monolayer thickness [31]. The weak bonding of molecules on Ge(001) [32,33] and the confined adsorption site at the surface dimers without any insertion into the Ge backbonds [34] have rendered the four charge states unlikely to be formed at the interfacial region of Ge(001).…”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, the investigation of a thick Ge oxide film does not help us to fully understand the oxygen-contacted Ge-Ge dimers layer. Another method, an in vacuo process using supersonic molecular oxygen beams, only produces the 1+ and 2+ oxidation states in the sub-monolayer thickness [31]. The weak bonding of molecules on Ge(001) [32,33] and the confined adsorption site at the surface dimers without any insertion into the Ge backbonds [34] have rendered the four charge states unlikely to be formed at the interfacial region of Ge(001).…”
Section: Introductionmentioning
confidence: 99%
“…Also, although structures with further subsurface migration of O were attempted by DFT calculations, no structure with additional stability compared to the state V could be located, possibly due to the low reactivity of the Ge substrate toward oxidation. 31,32…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Therefore, it can be understood that new bonds are formed along with the breakage of similarly stable bonds, and thus the magnitude of the overall energy change accompanying thermal reaction of phenoxy/Ge(100) is small. Also, although structures with further subsurface migration of O were attempted by DFT calculations, no structure with additional stability compared to the state V could be located, possibly due to the low reactivity of the Ge substrate toward oxidation. , …”
Section: Resultsmentioning
confidence: 99%
“…An O 2 molecule beam, in which all of the molecules have the same energy, is suitable for fundamental studies of the O 2 dissociative oxidation. Yoshigoe et al developed a real-time XPS apparatus that can detect photoelectrons generated from the sample irradiated by the O 2 molecule beam to investigate the initial surface oxidation process on Si and Ge. , …”
Section: Introductionmentioning
confidence: 99%
“…Yoshigoe XPS apparatus that can detect photoelectrons generated from the sample irradiated by the O 2 molecule beam to investigate the initial surface oxidation process on Si and Ge. 23,24 In this study, we applied the same technique to observe the surface oxidation of GaN. The O 1s core XPS spectra were continuously observed in real time during irradiation of the O 2 molecule beam on (0001) (Ga-polarity (+c)) and (0001̅ ) (Npolarity (−c)) and m-plane (101̅ 0) surfaces of GaN to monitor the oxidation process on each surface.…”
Section: Introductionmentioning
confidence: 99%