In situ variations of carrier decay and proton induced luminescence characteristics in polycrystalline CdS

Abstract

Evolution of the microwave-probed photoconductivity transients and of the proton induced luminescence has simultaneously been examined in polycrystalline CdS layers evaporated in vacuum during exposure to a 1.6 MeV proton beam. The decrease of the intensity of luminescence peaked at 510 and 709 nm wavelengths and of values of the effective carrier lifetime has been correlated in dependence of proton irradiation fluence. The defect introduction rate has been evaluated by the comparative analysis of the laser and proton beam induced luminescence. The difference of a carrier pair generation mechanism inherent for light and for a proton beam has been revealed.

Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices

“…Stretched-exponential transients of carrier decay are also inherent for other disordered materials, such as strain-relaxed Si-SiGe layered structures 98 and polycrystalline CdS material. 99,100 For strain-relaxed Si-SiGe layered structures, it can be noticed in Fig. 52a that a singleexponential decay is obtained for crystalline Si substrates while for the strain-relaxed buffer layers the stretched-exponential relaxation (SER) is inherent.…”

Carrier decay and luminescence characteristics in hadron irradiated MOCVD GaN

“…Alternatively to interpretations [11] of the B-L origin, the B-PI-L can also be attributed to the rather high density of dislocations, which are more resistant to the radiation destruction. Using the methodology, described in [8,12], the efficiency κ P of a single proton generation is obtained to be κ P = n P /N P ∼ = 1.3 × 10 7 cm −3 per proton and κ P A pr = 40 carrier pairs per a micrometer of layer depth per proton. This κ P A pr = 40 µm −1 p −1 value is close to those values for wide-gap materials, listed in ref.…”