<i>(Invited) </i>Computer Simulation of Intrinsic Point Defect Distribution Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth

Sueoka, Koji; Mukaiyama, Yuji; Kobayashi, Kōji; Fukuda, Hiroaki; Yamaoka, Shunta; Maeda, Susumu; Iizuka, Masaya; Mamedov, V. M.

doi:10.1149/08610.0003ecst

Cited by 3 publications

(2 citation statements)

References 26 publications

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“…x cri changes depending on the concentration of impurity atoms, such as dopants and oxygen incorporated into the crystal, [5][6][7][8][9][10][11][12][13][14] and the shape of the solid-liquid interface during crystal growth. 15,16) Furthermore, x cri is affected by thermal stress in the crystal during crystal growth.…”

Section: Introductionmentioning

confidence: 99%

Numerical and experimental investigation of the effect of the solid–liquid interface shape on grown-in defects in a silicon single crystal

Suewaka,

Saishoji,

Nishizawa

2024

Jpn. J. Appl. Phys.

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The demand for grown-in defect-free wafers for high-performance silicon semiconductor devices is significantly increasing. To obtain defect-free crystals, the ratio v/G of the growth rate v to the temperature gradient G in the growth direction near the solid–liquid interface during crystal growth must be kept at a critical value ξcri. Furthermore, ξcri depends on the interface shape, which is interpreted as the change in the diffusion direction of point defects due to the change in the interface shape. In this study, we present a new interpretation based on simulations and experiments, in which ξcri changes due to the effect of the diffusion direction of point defects when the solid–liquid interface shape is convex, as in the conventional interpretation, as well as the effect of thermal stress when it is concave.

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Section: Introductionmentioning

confidence: 99%

Numerical and experimental investigation of the effect of the solid–liquid interface shape on grown-in defects in a silicon single crystal

Suewaka,

Saishoji,

Nishizawa

2024

Jpn. J. Appl. Phys.

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“…A wide range of oxygen concentrations can be investigated as changes in solid-liquid interface shapes and thermal stress can be considered to determine α. Although there are cases wherein PDSim was used to investigate the impact of α on the point defect behavior and tendency (x cri ), [21][22][23] there has been no investigation on determining α by using PDSim.…”

Section: Introductionmentioning

confidence: 99%

Numerical and experimental investigation of effect of oxygen concentration on grown-in defects in a Czochralski silicon single crystal

Suewaka

Saishoji

Nishizawa

2023

Jpn. J. Appl. Phys.

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Grown-in defect-free wafers are required in silicon semiconductor devices. A point defect concentration simulation was performed along with an experimental investigation, demonstrating a wide range of oxygen concentrations from 1.6 × 1017 to 9.1 × 1017 cm−3 in crystals. Thus, the effect of oxygen atoms in a Czochralski silicon single crystal with grown-in defect behavior was revealed. Consequently, the increasing vacancy concentration trapped by the oxygen atom (oxygen coefficient) was estimated as 4.61 × 10−5 per oxygen atom. Previously, for obtaining the oxygen coefficient, a regression equation assuming thermal equilibrium concentrations of vacancy (V) and interstitial Si (I) was applied to the experimental results. However, the interface shape, thermal stress, and hot-zone structure of the experimental level needed to be arranged; this affected the grown-in defect behavior. In this study, the oxygen coefficient and thermal equilibrium concentration of V and I were determined uniquely without arranging the situations experimental level.

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The Cu photoluminescence defect and the early stages of Cu precipitation in Si

Vincent

Estreicher

Weber

et al. 2020

Journal of Applied Physics

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This theoretical–experimental study focuses on the formation of the substitutional-tri-interstitial cluster Cus1Cui3, which has been proposed as the photoluminescence defect CuPL. The configurations and electronic properties of the intermediate defects Cus1Cui1 and Cus1Cui2 are calculated, and their electrically active levels are obtained from conventional and Laplace deep-level transient spectroscopy. The vacancy formation energy near copper-related defects is calculated and found to be much smaller than in the perfect crystal. Then, we show how Cus1Cui3 could become the seed of agglomerates of Cus1Cui3 “units.” The discussion focuses mostly on unanswered questions about the discrepancies between the calculated and measured properties of CuPL and Cus1Cui3.

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(Invited) Computer Simulation of Intrinsic Point Defect Distribution Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth

Cited by 3 publications

References 26 publications

Numerical and experimental investigation of the effect of the solid–liquid interface shape on grown-in defects in a silicon single crystal

Numerical and experimental investigation of the effect of the solid–liquid interface shape on grown-in defects in a silicon single crystal

Numerical and experimental investigation of effect of oxygen concentration on grown-in defects in a Czochralski silicon single crystal

The Cu photoluminescence defect and the early stages of Cu precipitation in Si

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