2020
DOI: 10.1109/temc.2020.2992553
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S-Parameter De-Embedding Error Estimation Based on the Statistical Circuit Models of Fixtures

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Cited by 18 publications
(8 citation statements)
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“…The left and right fixtures used to connect each of the N = 20 ports of the connector to the VNA have been developed and characterized using time and frequency domain measurement techniques, as reported in references 4,26. They consist of a midsection of 3‐inch long‐coupled strip lines; on the port sides, each fixture includes a stripline to coaxial transition and a 2.4 mm coaxial connector toward the measurement system.…”
Section: Numerical Validationmentioning
confidence: 99%
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“…The left and right fixtures used to connect each of the N = 20 ports of the connector to the VNA have been developed and characterized using time and frequency domain measurement techniques, as reported in references 4,26. They consist of a midsection of 3‐inch long‐coupled strip lines; on the port sides, each fixture includes a stripline to coaxial transition and a 2.4 mm coaxial connector toward the measurement system.…”
Section: Numerical Validationmentioning
confidence: 99%
“…In the process of experimentally characterizing the performances and specifications of electronic devices in the world of signal integrity (SI) or radio frequency (RF) applications, the de-embedding process [1][2][3] is a post-measurement technique aimed at revealing information about the device under test (DUT) by removing the impact introduced by the fixtures (ranging from simple connectors to more complex assemblies) used to connect the DUT to the measurement system. 4 In reference 5, the most recent de-embedding methods are reviewed and investigated using both 3D simulation and vector network analyzer (VNA) measurements to accurately evaluate their residual error. Then, some potential sources of error are hypothesized and overcome by proposing solutions based on a de-embedding plane that can ensure a TEM (or quasi-TEM) mode propagation.…”
Section: Introductionmentioning
confidence: 99%
“…7, we saw that (13) may fit the ZTDR(t) quite well. This gives us the idea that, given a rising ZTDR(t), we can first fit it with (13) to obtain estimates for the parameters Z∞ and a. Then, a causal model for ZLINE can be constructed by (25) or (26) (Appendix-D).…”
Section: B Estimation Of Zline For High Conductor-loss Linesmentioning
confidence: 99%
“…Substituting ( 16) into (9), and again assuming G = 0, we arrive at the following model for characteristic impedance: Fitting by (13) Connector, microstrip, and via…”
Section: B Estimation Of Zline For High Conductor-loss Linesmentioning
confidence: 99%
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