<i>The Electrical Resistivity of Metals and Alloys</i>

Rossiter, P. L.

doi:10.1063/1.2811462

Cited by 112 publications

(97 citation statements)

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“…The change in resistivity for the addition of copper to aluminum is known to be c ϭ150 ⍀ cm/atomic fraction copper and has a similar magnitude for other types of defects. 22 The contribution to the resistance of each region of the via has been calculated numerically to be R 1 ϭ0.015 ⍀ for the M 1 region and R 2 ϭ0.030 ⍀ for the M 2 region of the via with the remainder of the resistance from the TiN layer. The resistance measurements are therefore most sensitive to changes in the M 2 region of the via but may be reduced by changes in M 1.…”

Section: B Initial Resistance Changesmentioning

confidence: 99%

Electromigration in isolated aluminum vias probed by resistance changes and 1/f noise

Alers¹,

Beverly

Oates³

1996

Journal of Applied Physics

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Articles you may be interested inThe effect of current density and stripe length on resistance saturation during electromigration testing 1/f noise and high-resolution resistance measurements have been performed in isolated aluminum via interconnects under electromigration stress. The test structures had a volume of roughly 1 m 3 and a resistance of 0.1 ⍀ with an internal TiN diffusion barrier. The 1/f resistance noise of the vias was found to be larger than the 1/f noise in the connecting aluminum runners due to the high intrinsic noise, high resistivity TiN layer within the structure. The direct currents induced reversible increases and decreases in the resistance of the via due to electromigration damage but had no effect on the 1/f noise. The magnitude and polarity dependence of the dc current induced resistance changes are most consistent with the initial electromigration of copper. Above 200°C the resistance changes became dominated by abrupt jumps in the resistance. Possible mechanisms for the abrupt resistance changes are reviewed.

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Section: B Initial Resistance Changesmentioning

confidence: 99%

Electromigration in isolated aluminum vias probed by resistance changes and 1/f noise

Alers¹,

Beverly

Oates³

1996

Journal of Applied Physics

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“…The Kohler magnetoresistance is caused by the Lorentz force acting on the electrons, which curls up their trajectories and reduces the average distance between scattering events. In most cases this MR ∼ B 2 [54], although other forms may be found in special circumstances, such as very thin films or very pure crystals [55]. This type of magnetoresistance can be identified by the fact that measurements at different temperatures should obey Kohler's rule:…”

Section: Diffusive Current Spin Polarisationmentioning

confidence: 99%

Spin-polarised currents and magnetic domain walls

Marrows

2005

Advances in Physics

218

163

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Electrical currents flowing in ferromagnetic materials are spinpolarised as a result of the spin-dependent band structure. When the spatial direction of the polarisation changes, in a domain structure, the electrons must somehow accommodate the necessary change in direction of their spin angular momentum as they pass through the wall. Reflection, scattering, and a transfer of angular momentum to the lattice are all possible outcomes, depending on the circumstances. This gives rise to a variety of different physical effects, most importantly a contribution to the electrical resistance caused by the wall, and a motion of the wall driven by the spin-polarised current.Historical and recent research on these topics is reviewed. * Phone: +44(0)113 3433780

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“…"Order -order" kinetics: resistometry Very weak "order -order" relaxations observed in systems with highly stable superstructures are efficiently monitored by means of resistometry -an indirect method based on the dependence of the electrical resistance on the degree of atomic order [9]. Two variants of experiments are performed: -"In situ" measurements, where electrical resistance of the specimen is measured directly at the temperature of the monitored ordering process.…”

Section: Experimental Techniquesmentioning

confidence: 99%

Atomic migration and ordering phenomena in bulk and thin films of FePd and FePt

Kozubski¹,

Issro²,

Zapala³

et al. 2006

MEKU

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Order -order" kinetics was studied by means of "in situ" and quasi-residual (REST) resistometry in bulk and thin films of L1 0 -ordered FePd and FePt intermetallics. Substantial effect of magnetic ordering on the activation energy for chemical ordering was revealed in FePd. A discontinuous change of ordering dynamics was detected in FePt between 800 and 830 K. The results are consistent with the data of Fe* diffusion in FePt multilayer examined by means of nuclear resonant scattering in grazing-incidence geometry (GINRS). Monte Carlo (MC) simulations of "order -order" processes in L1 0 -ordered bulk FePd and FePt and nanolayered FePt have been carried out using Glauber dynamics with vacancy mechanism of atomic jumps. Multi-timescale "order -order" relaxations observed in the bulk were predominated in nanolayers by a reorientation of the initial z-variant L1 0 superstructure into a mixture of x-and y-variants. Experimental studies of atomic migration General remarksAtomic migration in the examined L1 0 -ordered intermetallics was studied by considering two sorts of phenomena: "order -order" kinetics controlled by atomic migration in non-steady-state conditions, and self-diffusion showing atomic migration in a steady state.An "order -order" relaxation, the kinetics of which is studied, is a response of a system with the degree of chemical order equilibrated at certain external conditions (temperature, pressure etc.) to a sudden change of these conditions. After such a change, the system evolves towards a state with the degree of chemical order corresponding to thermodynamic equilibrium in the new conditions 1 . R. Kozubski et al.: Atomic migration and ordering phenomena in bulk and thin films of FePd and FePt Z. Metallkd. 97 (2006) 3  Carl Hanser Verlag, München 273 B Basic 1 In "order -order" relaxations, both the initial and the final equilibrium states belong to the domain of chemical long-range order. Zeitschrift für Metallkunde downloaded from www.hanser-elibrary.com by Kungliga Tekniska on August 26, 2015For personal use only.

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The Electrical Resistivity of Metals and Alloys

Cited by 112 publications

References 0 publications

Electromigration in isolated aluminum vias probed by resistance changes and 1/f noise

Electromigration in isolated aluminum vias probed by resistance changes and 1/f noise

Spin-polarised currents and magnetic domain walls

Atomic migration and ordering phenomena in bulk and thin films of FePd and FePt

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