I–V characteristics of two-dimensional nanodot-array single electron transistors

Mehrara, Hamed; Khaje, Mahdi; Zahedinejad, Mohammad; Rezvani, Farshad Hashemi

doi:10.1016/j.spmi.2012.09.002

Cited by 3 publications

(6 citation statements)

References 19 publications

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“…The gaps then form a tunnel barrier with an associated energy barrier. In such a system, single-electron tunneling occurs, which holds the promise of achieving the lowest power consumption in modern electronic devices [ 32 , 33 ]. Hence, the palladium nanoparticles disconnect from each other upon the adsorption of hydrogen gas and the size and widths of the gaps between the nanoparticles change.…”

Section: Introductionmentioning

confidence: 99%

“…The models of multiple-island single-electron chains are studied by solving master equations or using Monte Carlo methods [ 34 , 35 , 36 ]. The advantages in contrast with single-island single-electron transistors (SETs)—in similar conditions in terms of dimensions of the islands and tunneling junctions—are ability to stand a higher threshold voltage of Coulomb blockade; lower sensitivity to unwanted effects such as defects, background charges, and uncertainty in the size of the palladium nanoparticles; higher operation temperature; and ease of fabrication [ 32 , 37 , 38 ]. In this research, we investigated the possibility of single-electron tunneling in well-arranged arrays of palladium nano-islands at room temperature.…”

Section: Introductionmentioning

confidence: 99%

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Coulomb Blockade Effect in Well-Arranged 2D Arrays of Palladium Nano-Islands for Hydrogen Detection at Room Temperature: A Modeling Study

et al. 2020

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The fast growth of hydrogen usage as a clean fuel in civil applications such as transportation, space technology, etc. highlights the importance of the reliable detection of its leakage and accumulation under explosion limit by sensors with a low power consumption at times when there is no accumulation of hydrogen in the environment. In this research, a new and efficient mechanism is presented for hydrogen detection—using the Coulomb blockade effect in a well-arranged 2D array of palladium nano-islands—which can operate at room temperature. We demonstrated that under certain conditions of size distribution and the regularity of palladium nano-islands, with selected sizes of 1.7, 3 and 6.1 nm, the blockade threshold will appear in current-voltage (IV) characteristics. In reality, it will be achieved by the inherent uncertainty in the size of the islands in nano-scale fabrication or by controlling the size of nanoparticles from 1.7 to 6.1 nm, considering a regular arrangement of nanoparticles that satisfies single-electron tunneling requirements. Based on the simulation results, the threshold voltage is shifted towards lower ones due to the expansion of Pd nanoparticles exposed to the environment with hydrogen concentrations lower than 2.6%. Also, exploring the features of the presented structure as a gas sensor, provides robustness against the Gaussian variation in nano-islands sizes and temperature variations. Remarkably, the existence of the threshold voltage in the IV curve and adjusting the bias voltage below this threshold leads to a drastic reduction in power consumption. There is also an improvement in the minimum detectable hydrogen concentration as well as the sensor response.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Coulomb Blockade Effect in Well-Arranged 2D Arrays of Palladium Nano-Islands for Hydrogen Detection at Room Temperature: A Modeling Study

et al. 2020

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“…[1][2][3][4] Apart from a well-accepted simulator (SIMON), there are a few models of single electron transistor (SET) which have been used extensively by the researcher for simulating single electronics circuits. [1][2][3][4] Apart from a well-accepted simulator (SIMON), there are a few models of single electron transistor (SET) which have been used extensively by the researcher for simulating single electronics circuits.…”

Section: Introductionmentioning

confidence: 99%

“…Due to its novel features like coulomb oscillation characteristics and coulomb blockade phenomena, single electron devices have drawn tremendous attention in the last 2 decades as a promising candidate for future nanoelectronics technology. [1][2][3][4] Apart from a well-accepted simulator (SIMON), there are a few models of single electron transistor (SET) which have been used extensively by the researcher for simulating single electronics circuits. [5][6][7][8][9] Due to the lower gain of single electronics devices compared with its CMOS counterpart, they are mostly used in the circuits designed targeting digital applications.…”

Section: Introductionmentioning

confidence: 99%

Error probability independent delay analysis of single electronics circuits

Jain

Ghosh²,

Dutta

et al. 2017

Circuit Theory & Apps

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This study based on Poisson process and orthodox theory of single electron tunneling for the first time proposes an error probability independent delay model for delay calculation of single electronics circuits, involving multiple tunneling events. The Poisson process assumes that the tunneling events are independent of each other, but in real single electronics circuits they are correlated through space and time, so this effect has been considered and included in the proposed model. The dependence of tunneling rates on the logic transition is thoroughly investigated. Finally, the model is applied to different logic gates, and the result is compared with the well known Monte Carlo approach to prove the accuracy of the proposed model.

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“…As an alternative approach, some other non-traditional and self-assembled structures exhibit the same behaviour as basic SET devices, which do not require extremely challenging nanofabrication technology. They are commonly modelled as multi-dot SET or two-dimensional multi-tunnelling junctions (2D-MTJs) in which the terminals are coupled by several islands instead of just one [15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Coulomb blockade in PtSi/porous Si Schottky barrier as a two‐dimensional multi‐tunnelling junction

Mehrara¹,

Raissi²,

Khaje³

2015

IET Circuits, Devices & Systems

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The authors report on Coulomb blockade effect in the PtSi/porous Si Schottky barrier. A model of two-dimensional multi-tunnelling junction (2D-MTJ) can explain the blockade characteristic of this barrier. Using the SIMON simulator, the electrical characteristics of the proposed model were investigated. The results show that simulated current-voltage curves achieve a reasonable fit with the measured data and the present model can be used to study the PtSi/porous Si Schottky barrier behaviour. In accordance with both the studies, Coulomb blockade phenomenon is observed in current oscillation and single-electron effect of this device at low temperatures (5 K) is justified using the 2D-MTJ model. In addition, it indicates that by increasing the current value with temperature and for high drain voltages, PtSi/porous Si Schottky barrier behaves like a single island single-electron tunnelling (SET) junction as previously reported by Raissi et al.

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I–V characteristics of two-dimensional nanodot-array single electron transistors

Cited by 3 publications

References 19 publications

Coulomb Blockade Effect in Well-Arranged 2D Arrays of Palladium Nano-Islands for Hydrogen Detection at Room Temperature: A Modeling Study

Coulomb Blockade Effect in Well-Arranged 2D Arrays of Palladium Nano-Islands for Hydrogen Detection at Room Temperature: A Modeling Study

Error probability independent delay analysis of single electronics circuits

Coulomb blockade in PtSi/porous Si Schottky barrier as a two‐dimensional multi‐tunnelling junction

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