2010
DOI: 10.1007/s10971-010-2384-5
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I–V–T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double Gaussian distribution of barrier heights

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Cited by 18 publications
(10 citation statements)
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“…This value is quite higher than 0.34 of conventional Au/p-Si Schottky diodes [35] and higher than 0.58 of Au/Perylene-diimide/p-Si [39], 0.41 of Au/strontium titanate/p-Si [40] and 0.68 of Au/Poly(4-vinyl phenol)/p-Si MIS structures [41] reported in literature. On the other hand, this value is also higher than metal/DLC/pSi Schottky diodes obtained by Gupta et al [28].…”
Section: Analysis Of Current-voltage Characteristics Of Au/dlc/p-si Mmentioning
confidence: 56%
“…This value is quite higher than 0.34 of conventional Au/p-Si Schottky diodes [35] and higher than 0.58 of Au/Perylene-diimide/p-Si [39], 0.41 of Au/strontium titanate/p-Si [40] and 0.68 of Au/Poly(4-vinyl phenol)/p-Si MIS structures [41] reported in literature. On the other hand, this value is also higher than metal/DLC/pSi Schottky diodes obtained by Gupta et al [28].…”
Section: Analysis Of Current-voltage Characteristics Of Au/dlc/p-si Mmentioning
confidence: 56%
“…The most important feature characterizing a Schottky barrier is its barrier height Φ B . Recently, considerable attention has been focused on the barrier height inhomogeneity in the Schottky devices 1–28. Several methods and approximations have been proposed to explain the formation of barrier from different materials including inorganic and/or organic interfaces and also to specify the behaviour of barriers at different bias and environmental conditions.…”
Section: Introductionmentioning
confidence: 99%
“…The performance and reliability of organic based Schottky barrier diodes especially depends on the formation of organic interfacial layer at metal–semiconductor (MS) interface and also on inhomogeneities of the Schottky barrier formation at MS interface 17–28. The existence of such an organic layer can have a strong influence on diode characteristics.…”
Section: Introductionmentioning
confidence: 99%
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“…In this technique, an organic interfacial layer is inserted between inorganic semiconductor and metal. As they can be applied to various areas like solar cells and Schottky diodes, there has been a growing interest in polymers such as poly(4-vinyl phenol), polyaniline, polyvinyl alcohol (PVA), poly(alkylthiophene) polypyrrole, polythiophene, and poly(3-hexylthiophene) [7][8][9][10][11][12][13][14][15][16][17][18]. In polymers, we find local free-volume holes or cavities of atomic and molecular dimensions, which may be the result of irregular packing of the molecules in amorphous phase (static and preexisting holes) and molecular relaxation of polymer chains and terminal ends (dynamic and transient holes).…”
Section: Introductionmentioning
confidence: 99%