Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/<i>p</i>-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

Özden, Şadan; Tozlu, Cem; Pakma, Osman

doi:10.1155/2016/6157905

Cited by 7 publications

(3 citation statements)

References 36 publications

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“…This can be attributed to differences in the affinity of the n-type and p-type Si [30]. Ozden et al fabricated Al/poly(4-vinyl phenol)/p-GaAs metal-oxide-semiconductor and they found ideality factor and barrier height values of 3.13 and 0.616 eV at 320 K and 11.56 and 0.147 eV at 80 K. They concluded that there was an increase in the barrier height as well as a decrease in the ideality factor with increasing temperature [31]. Yuksel et al investigated the temperature-dependent electrical properties of Au/perylene-diimide/n-Si Schottky diodes.…”

Section: Resultsmentioning

confidence: 99%

Schottky barrier engineering in metal/semiconductor structures for high thermal stability

Erdoğan¹,

Yılmaz²,

Aydoğan³

et al. 2021

Semicond. Sci. Technol.

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In this study, Co/eosin-y/p-Si/Al and Co/eosin-y/n-Si/Al heterojunctions with Schottky barrier were produced and electrical characteristics were investigated in the temperature range 100-460 K at intervals of 20 K. For each device, the barrier heights (ϕ b ), ideality factors (n) and series resistance (Rs) values were calculated using different methods from the current-voltage curves. It was observed that the ideality factor and series resistance increased with decreasing temperature, while the height of the barrier decreased. One of the reasons for this change in parameters is the inhomogeneity of the Schottky barrier. The Rs values were found with the help of Cheung functions and Norde functions. The contact parameters obtained from the Cheung functions and those obtained from the Norde function were compared. It was observed that the barrier heights obtained from these methods increased linearly with increasing temperature values. The variation of temperature-dependent interfacial state density versus interfacial state energy was shown. The density of the interfacial state decreased, with increasing interfacial state energy at each temperature value. These characteristics indicate that Co/eosin-y/p-Si/Al and Co/eosin-y/n-Si/Al devices are good candidates for rectifying and thermal sensing applications.

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Section: Resultsmentioning

confidence: 99%

Schottky barrier engineering in metal/semiconductor structures for high thermal stability

Erdoğan¹,

Yılmaz²,

Aydoğan³

et al. 2021

Semicond. Sci. Technol.

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“…The Si wafers are washed with acetone and isopropanol, followed by mild base piranha wash, and then finally cleaned with plenty of deionized water. [47,48] OFETs (Bottom-gate/top-contact) is fabricated on heavily n + + -doped silicon substrates as a gate electrode (capacitance, C i = 8.3 nF) over which a thermally grown layer of SiO 2 (~300 nm) acts as the gate insulator. The semiconducting films were fabricated using the spin-coating technique.…”

Section: Ofet Characteristicsmentioning

confidence: 99%

“…To explore the OFET characterizations, a Keithley 4200 A semiconductor characterization system was employed. The Si wafers are washed with acetone and isopropanol, followed by mild base piranha wash, and then finally cleaned with plenty of deionized water [47,48] . OFETs (Bottom‐gate/top‐contact) is fabricated on heavily n ++ ‐doped silicon substrates as a gate electrode (capacitance, C i =8.3 nF) over which a thermally grown layer of SiO 2 (∼300 nm) acts as the gate insulator.…”

Section: Ofet Characteristicsmentioning

confidence: 99%

High‐Performance Organic Field‐effect Transistors from Functionalized Zinc Meso‐Porphyrins

et al. 2022

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A series of new zinc porphyrins were synthesized, and their charge transport property was tuned by introducing various groups. Triarylamine was introduced to the porphyrin moiety at the meso‐position as an electron donor, enhancing the charge carrier mobility. All the synthesized zinc porphyrins are thermally stable with a decomposition temperature over 178 °C. High frontier molecular orbitals levels of these compounds make them stable donor materials. SEM analysis of zinc porphyrins fabricated by spin‐coating resulted in diversely self‐assembled films. Field‐effect transistors were fabricated using bottom‐gate/top‐contact architecture (BGTC) by solution‐processable technique. The higher charge carrier mobility of 5.17 cm2/Vs with on/off of 106 was obtained for trifluoromethyl substituted compound due to better molecular packing. In addition, GIXRD analysis revealed zinc porphyrins films crystalline nature, which supports its better charge carrier mobility. The present investigation has validated that zinc porphyrin building blocks are an attractive candidate for p‐channel OFET devices.

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Investigation of electrical and dielectric properties of epitaxially grown Au/n-GaAs/p-Si/Al heterojunction

2020

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Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

Cited by 7 publications

References 36 publications

Schottky barrier engineering in metal/semiconductor structures for high thermal stability

Schottky barrier engineering in metal/semiconductor structures for high thermal stability

High‐Performance Organic Field‐effect Transistors from Functionalized Zinc Meso‐Porphyrins

Investigation of electrical and dielectric properties of epitaxially grown Au/n-GaAs/p-Si/Al heterojunction

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